STMicroelectronics EVLSTGAP3S6S Half-Bridge Evaluation Board
STMicroelectronics EVLSTGAP3S6S Half-Bridge Evaluation Board is designed to evaluate the STGAP3S6S isolated single-gate driver. The STGAP3S6S is characterized by 6A current capability, rail-to-rail outputs, and optimized UVLO and DESAT protection thresholds for SiC MOSFETs. This feature makes the device optimal for high-power motor drivers in industrial applications. The gate driver has a single output pin and a driver line for an external Miller CLAMP N-channel MOSFET. This option optimizes positive and negative gate spike suppression during fast commutations in half-bridge topologies.
The board is supplied by the 5V VAUX connection, which fed the isolated DC-DC converters for the low-side and high-side driving sections. VAUX can directly supply the gate drivers if a 5V MCU is used or by the onboard linear regulator if a 3.3V MCU is used. The PWM and Reset inputs can be easily controlled through dedicated connectors, while diagnostic outputs are connected to an onboard LED.
Device protection features (desaturation, soft turn-off, and Miller clamp) are connected to the recommended network on the board and can be easily evaluated through the board test points. Dual input pins allow the selection of signal polarity control and implementation of HW interlocking protection to avoid cross-conduction in case of controller malfunction. The device enables the implementation of negative gate driving, and the onboard isolated DC-DC converters allow working with optimized driving voltage for SiC MOSFETs.
The STMicroelectronics EVLSTGAP3S6S board allows for evaluating all of the STGAP3S6S features while operating with a bus voltage of up to 520V. The bus voltage can be increased to 1200V if needed by replacing the two SiC MOSFETs with appropriate devices in an H2PAK-7 package and the C4 capacitance.
Features
- STGAP3SXS device
- Driver current capability of 6A source/sink @ 25°C
- 75ns input-output propagation delay
- Miller CLAMP driver for external N-channel MOSFET
- Adjustable soft turn-off function
- UVLO function
- Desaturation protection
- Gate driving voltage up to 32V
- Negative gate driving voltage
- 3.3V, 5V TTL/CMOS inputs with hysteresis
- Temperature shutdown protection
- Reinforced galvanic isolation
- Isolation voltage VISO = 5.7kVRMS (according to UL 1577)
- Transient overvoltage VIOTM = 8kVPEAK (according to IEC 60747-17)
- Max. repetitive isolation voltage VIORM = 1.2kVPEAK (according to IEC 60747-17)
- Board
- Half-bridge configuration
- High-voltage rail up to 520V (limited by the MOSFET’s and capacitor’s rating)
- SCTH60N120G2-7 SiC MOSFETs (1200V, 52mΩ, 60A)
- Compatible with 5V and 3.3V MCUs
- VDD logic supplied by onboard-generated 3.3V or VAUX = 5V
- Onboard isolated DC-DC converters to supply high-side and low-side gate drivers, fed by VAUX = 5V, with 5.2kVpk maximum isolation
- Easy jumper selection of driving voltage configuration (+19/0V, +19/-4.7V, +17/0V, or +17/-4.7V)
- Fault LED indicators
- Maximum working voltage across isolation of 1200V
- RoHS compliant
Board Layout
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