Vishay Dual N-Channel TrenchFET® Power MOSFETs
Vishay Siliconix Dual N-Channel TrenchFET® Power MOSFETs offer co-packaged MOSFETs to reduce space and increase performance over two discrete. These Dual N-Channel TrenchFET Power MOSFETs combine two MOSFETs into a compact package. By combining the devices into one package the Vishay Siliconix Dual N-Channel TrenchFET Power MOSFETs simplify the layout, reduces parasitic inductance from PCB traces, increases efficiency, and reduces ringing. Typical applications include system power, POL, and synchronous buck converters in notebooks.
Features
- TrenchFET Power MOSFETs
- 100% Rg and UIS Tested
- Halogen-free according to IEC 61249-2-21 definition
- Compliant to RoHS Directive 2002/95/EC
Applications
- System power
- Notebook
- Servers
- POL
- Synchronous Buck Converter
Associated Products
Vishay Semiconductors TrenchFET® Gen III Power MOSFETs
Offers low on-resistance and on-resistance times gate charge.
Vishay / Siliconix MOSFET à canal N de gén. IV TrenchFET
Procure une faible résistance à l'état passant pouvant descendre à 1,35 mΩ à 4,5 V.
View Results ( 2 ) Page
| Numéro de pièce | Package/Boîte | Vds - Tension de rupture drain-source | Id - Courant continu de fuite | Rds On - Résistance drain-source | Pd - Dissipation d’énergie | Fiche technique |
|---|---|---|---|---|---|---|
| SIZ998DT-T1-GE3 | PowerPAIR-6x5-8 | 30 V | 20 A, 60 A | 4.7 mOhms, 2.2 mOhms | 20.2 W, 32.9 W |  |
| SIZ340DT-T1-GE3 | PowerPAIR-3x3-8 | 30 V | 30 A, 40 A | 9.5 mOhms, 5.1 mOhms | 16.7 W, 31 W | |
Publié le: 2012-01-24
| Mis à jour le: 2024-08-15