StrongIRFET™ Power MOSFETs

Infineon StrongIRFET™ Power MOSFET family is optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current-carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability. 

Résultats: 27
Sélectionner Image Référence Fab. Description Fiche technique Disponibilité Prix (EUR) Filtrer les résultats dans le tableau par prix unitaire basé sur votre quantité. Qté. RoHS Modèle de ECAO Technologie Style de montage Package/Boîte Polarité du transistor Nombre de canaux Vds - Tension de rupture drain-source Id - Courant continu de fuite Rds On - Résistance drain-source Vgs - Tension grille-source Vgs th - Tension de seuil grille-source Qg - Charge de grille Température de fonctionnement min. Température de fonctionnement max. Pd - Dissipation d’énergie Mode canal Qualification Nom commercial Conditionnement
Infineon Technologies MOSFET IFX FET 60V 782En stock
Min. : 1
Mult. : 1
: 800

Si SMD/SMT TO-263-7 N-Channel 1 Channel 60 V 282 A 1.2 mOhms - 20 V, 20 V 2.1 V 155 nC - 55 C + 175 C 250 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET >80 - 100V 5.132En stock
400Sur commande
Min. : 1
Mult. : 1

Si Through Hole N-Channel 1 Channel 100 V 203 A 1.7 mOhms - 20 V, 20 V 3.8 V 168 nC - 55 C + 175 C 341 W Enhancement Tube
Infineon Technologies MOSFET N-Ch 30V 40A TISON-8 6.660En stock
Min. : 1
Mult. : 1
: 5.000

Si SMD/SMT TISON-8 N-Channel 2 Channel 30 V 40 A 4.2 mOhms, 4.2 mOhms - 20 V, 20 V 1.2 V 17 nC - 55 C + 150 C 30 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET 30V 1 N-CH HEXFET 3.1mOhms 41nC 4.180En stock
Min. : 1
Mult. : 1
: 4.000

Si SMD/SMT PQFN-8 N-Channel 1 Channel 30 V 120 A 4.6 mOhms - 20 V, 20 V 1.8 V 41 nC - 55 C + 150 C 3.6 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IR FET >60-400V 1.186En stock
Min. : 1
Mult. : 1
Si Through Hole N-Channel 2 Channel 100 V 11 A 72.5 mOhms - 20 V, 20 V 5 V 12 nC - 55 C + 150 C 18 W Enhancement Tube
Infineon Technologies MOSFET IR FET >60-400V 1.126En stock
Min. : 1
Mult. : 1

Si Through Hole TO-247AC-3 N-Channel 1 Channel 75 V 195 A 1.85 mOhms - 20 V, 20 V 4 V 380 nC - 55 C + 175 C 520 W Enhancement Tube
Infineon Technologies MOSFET MOSFET N CH 60V 95A TO-220AB 54.673En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 95 A 4.9 mOhms - 20 V, 20 V 3.7 V 75 nC - 55 C + 175 C 125 W Enhancement StrongIRFET Tube
Infineon Technologies MOSFET MOSFT 60V 79A 8.4mOhm 46nC Qg 16.179En stock
Min. : 1
Mult. : 1
: 2.000
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 60 V 79 A 7.1 mOhms - 20 V, 20 V 1.8 V 69 nC - 55 C + 175 C 110 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET >80 - 100V 16.776En stock
Min. : 1
Mult. : 1
: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 100 V 59 A 12.2 mOhms - 20 V, 20 V 2 V 26 nC - 55 C + 175 C 94 W Enhancement OptiMOS Reel, Cut Tape, MouseReel


Infineon Technologies MOSFET IFX FET >100-150V 2.017En stock
Min. : 1
Mult. : 1

Si Through Hole N-Channel 1 Channel 150 V 203 A 2.7 mOhms - 20 V, 20 V 4.6 V 160 nC - 55 C + 175 C 556 W Enhancement Tube


Infineon Technologies MOSFET IR FET >60-400V 1.893En stock
2.80003/12/2026 attendu
Min. : 1
Mult. : 1

Si Through Hole TO-247AC-3 N-Channel 1 Channel 150 V 171 A 5.9 mOhms - 20 V, 20 V 3 V 151 nC - 55 C + 175 C 517 W Enhancement Tube
Infineon Technologies MOSFET IFX FET 40V 6.429En stock
Min. : 1
Mult. : 1
: 5.000

Si SMD/SMT TDSON-FL-8 N-Channel 1 Channel 40 V 121 A 2.8 mOhms - 20 V, 20 V 2.2 V 29 nC - 55 C + 175 C 75 W Enhancement Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET MOSFET_(120V 300V) 688En stock
Min. : 1
Mult. : 1

Si Through Hole TO-247-3 N-Channel 1 Channel 150 V 171 A 4.8 mOhms - 30 V, 30 V 3 V 227 nC - 55 C + 175 C 517 W Enhancement AEC-Q101 Tube

Infineon Technologies MOSFET MOSFT 100V 51A 25mOhm 66.7nCAC 1.870En stock
11.600Sur commande
Min. : 1
Mult. : 1

Si Through Hole TO-247-3 N-Channel 1 Channel 100 V 51 A 25 mOhms - 20 V, 20 V 1.8 V 66.7 nC - 55 C + 175 C 180 W Enhancement Tube
Infineon Technologies MOSFET 40V StrongIRFET 240A, .75mOhm,305nC 5.366En stock
Min. : 1
Mult. : 1
: 800

Si SMD/SMT TO-263-7 N-Channel 1 Channel 40 V 522 A 750 mOhms - 20 V, 20 V 3 V 305 nC - 55 C + 175 C 375 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET 40V, 195A, 1.8 mOhm 150 nC Qg, TO-262 1.328En stock
Min. : 1
Mult. : 1

Si Through Hole TO-262-3 N-Channel 1 Channel 40 V 250 A 1.8 mOhms - 20 V, 20 V 3.9 V 225 nC - 55 C + 175 C 230 W Enhancement StrongIRFET Tube
Infineon Technologies MOSFET 60V Single N-Channel HEXFET Power MOSFET in a D2PAK-7 850En stock
Min. : 1
Mult. : 1
: 800

Si SMD/SMT D2PAK-7 N-Channel 1 Channel 60 V 300 A 1.9 mOhms - 16 V, 16 V 2.5 V 160 nC - 55 C + 175 C 380 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET MOSFT 60V 270A 2.4mOhm 91nC Log Lvl 3.119En stock
3.20026/11/2026 attendu
Min. : 1
Mult. : 1
: 800
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 60 V 270 A 2.4 mOhms - 16 V, 16 V 2.5 V 140 nC - 55 C + 175 C 380 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies IRFP4310ZPBFXKMA1
Infineon Technologies MOSFET IR FET >60-400V 269En stock
40012/08/2026 attendu
Min. : 1
Mult. : 1

Si Through Hole TO-247AC-3 N-Channel 1 Channel 100 V 120 A 6 mOhms - 20 V, 20 V 4 V 120 nC - 55 C + 175 C 280 W Enhancement Tube
Infineon Technologies IRFP4468PBFXKMA1
Infineon Technologies MOSFET IR FET >60-400V 3.880En stock
Min. : 1
Mult. : 1

Si Through Hole TO-247AC-3 N-Channel 1 Channel 100 V 290 A 2.6 mOhms - 20 V, 20 V 2 V 360 nC - 55 C + 175 C 520 W Enhancement Tube


Infineon Technologies MOSFET IR FET >60-400V 251En stock
3.60005/11/2026 attendu
Min. : 1
Mult. : 1

Si Through Hole TO-247AC-3 N-Channel 1 Channel 100 V 180 A 4.5 mOhms - 20 V, 20 V 2 V 150 nC - 55 C + 175 C 370 W Enhancement Tube
Infineon Technologies MOSFET 40V 120A 2.5 mOhm HEXFET 90nC 143W 1En stock
3.000Sur commande
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 40 V 120 A 2.5 mOhms - 20 V, 20 V 1.8 V 135 nC - 55 C + 175 C 143 W Enhancement StrongIRFET Tube
Infineon Technologies MOSFET N-Ch 30V 100A TDSON-8 OptiMOS
55.900Sur commande
Min. : 1
Mult. : 1
: 5.000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 30 V 230 A 1.1 mOhms - 20 V, 20 V 2 V 72 nC - 55 C + 150 C 96 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET >80 - 100V
14.40027/08/2026 attendu
Min. : 1
Mult. : 1

Si Through Hole N-Channel 1 Channel 100 V 209 A 1.28 mOhms - 20 V, 20 V 3.8 V 330 nC - 55 C + 175 C 556 W Enhancement Tube
Infineon Technologies MOSFET IFX FET >100-150V
1.963Sur commande
Min. : 1
Mult. : 1

Si Through Hole TO-247-3 N-Channel 1 Channel 150 V 186 A 4.5 mOhms - 20 V, 20 V 4.6 V 80 nC - 55 C + 175 C 341 W Enhancement Tube