Ergebnisse: 32
Auswählen Bild Teile-Nr. Herst. Beschreibung Datenblatt Verfügbarkeit Preis (EUR) Ergebnisse in der Tabelle nach dem Einheitspreis bei Ihrer Menge filtern. Menge RoHS ECAD Model Transistorpolung Technologie Id - Drain-Gleichstrom Vds - Drain-Source-Durchschlagspannung Betriebsfrequenz Verstärkung Ausgangsleistung Minimale Betriebstemperatur Maximale Betriebstemperatur Montageart Verpackung/Gehäuse Verpackung
NXP Semiconductors AFT27S006NT1
NXP Semiconductors MOSFET HF-Transistoren Airfast RF Power LDMOS Transistor, 728-3700 MHz, 28.8 dBm Avg., 28 V 1.248Auf Lager
Min.: 1
Mult.: 1
: 1.000

N-Channel Si 65 V 728 MHz to 3.7 GHz 16 dB 28.8 dBm - 40 C + 150 C SMD/SMT PLD-1.5W Reel, Cut Tape
NXP Semiconductors MOSFET HF-Transistoren Wideband RF Power LDMOS Transistor, 136-941 MHz, 4 W, 7.5 V 22.413Auf Lager
Min.: 1
Mult.: 1
: 1.000

N-Channel Si 4 A 30 V 136 MHz to 941 MHz 20.9 dB 4.9 W - 40 C + 150 C SMD/SMT SOT-89-3 Reel, Cut Tape, MouseReel
NXP Semiconductors MOSFET HF-Transistoren Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V 899Auf Lager
Min.: 1
Mult.: 1

N-Channel Si 8.8 A 133 V 1.8 MHz to 250 MHz 21.1 dB 115 W - 40 C + 150 C Through Hole TO-220-3 Tube
NXP Semiconductors MOSFET HF-Transistoren RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V 465Auf Lager
Min.: 1
Mult.: 1

N-Channel Si 30 A 133 V 1.8 MHz to 250 MHz 20.4 dB 330 W - 40 C + 150 C Through Hole TO-247-3 Tube
NXP Semiconductors MOSFET HF-Transistoren Wideband Airfast RF Power LDMOS Transistor, 136-941 MHz, 7 W, 7.5 V 10.000Auf Lager
7.000erwartet ab 29.07.2026
Min.: 1
Mult.: 1
: 1.000

N-Channel Si 3 A 30 V 136 MHz to 941 MHz 15 dB 8 W - 40 C + 150 C SMD/SMT DFN-16 Reel, Cut Tape, MouseReel
NXP Semiconductors MOSFET HF-Transistoren Airfast Broadband RF Power LDMOS Transistor, 136-520 MHz, 70 W, 12.5 V 522Auf Lager
Min.: 1
Mult.: 1
: 500

N-Channel Si 8 A 40 V 136 MHz to 520 MHz 18.5 dB 70 W - 40 C + 150 C SMD/SMT TO-270-WB-4 Reel, Cut Tape, MouseReel
NXP Semiconductors MOSFET HF-Transistoren Airfast Wideband RF Power LDMOS Transistor, 136-520 MHz, 31 W, 13.6 V 2.103Auf Lager
Min.: 1
Mult.: 1
: 500

N-Channel Si 7.5 A 40 V 136 MHz to 520 MHz 17.7 dB 33 W - 40 C + 150 C SMD/SMT TO-270-2 Reel, Cut Tape, MouseReel
NXP Semiconductors MOSFET HF-Transistoren Airfast RF Power LDMOS Transistor, 1500 W CW, 1.8-500 MHz, 50 V 64Auf Lager
100erwartet ab 12.10.2026
Min.: 1
Mult.: 1
: 50

N-Channel Si 36 A 135 V 1.8 MHz to 500 MHz 23.7 dB 1.5 kW - 40 C + 150 C SMD/SMT NI-1230H-4S Reel, Cut Tape, MouseReel
NXP Semiconductors MOSFET HF-Transistoren Wideband RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V 28Auf Lager
Min.: 1
Mult.: 1
: 50

N-Channel Si 36 A 133 V 1.8 MHz to 500 MHz 23 dB 1.5 kW - 40 C + 150 C SMD/SMT OM-1230-4 Reel, Cut Tape
NXP Semiconductors MOSFET HF-Transistoren Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 1250 W CW, 50 V 85Auf Lager
Min.: 1
Mult.: 1
: 50

N-Channel Si 30 A 133 V 1.8 MHz to 600 MHz 24 dB 1.25 kW + 150 C Screw Mount NI-1230H-4 Reel, Cut Tape, MouseReel
NXP Semiconductors MHT1803B
NXP Semiconductors MOSFET HF-Transistoren 300W 200MHZ TO-247-3L 284Auf Lager
Min.: 1
Mult.: 1
N-Channel Si 1.8 MHz to 50 MHz 28.2 dB 300 W + 150 C Through Hole TO-247-3 Tube
NXP Semiconductors MOSFET HF-Transistoren Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V 47Auf Lager
Min.: 1
Mult.: 1
: 50

N-Channel Si 43 A 179 V 1.8 MHz to 400 MHz 24.4 dB 1.8 kW - 40 C + 150 C SMD/SMT OM-1230-4 Reel, Cut Tape
NXP Semiconductors MOSFET HF-Transistoren Airfast Wideband RF Power LDMOS Transistor, 764-941 MHz, 31 W, 13.6 V 215Auf Lager
Min.: 1
Mult.: 1
: 500

N-Channel Si 10 A 40 V 764 MHz to 941 MHz 15.7 dB 32 W - 40 C + 150 C SMD/SMT TO-270-2 Reel, Cut Tape, MouseReel
NXP Semiconductors MOSFET HF-Transistoren Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V 70Auf Lager
250erwartet ab 14.12.2026
Min.: 1
Mult.: 1
: 50

N-Channel Si 130 V 1.8 MHz to 600 MHz 26.5 dB 300 W + 150 C Screw Mount NI-780-4 Reel, Cut Tape, MouseReel
NXP Semiconductors MOSFET HF-Transistoren Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V 48Auf Lager
500erwartet ab 08.10.2026
Min.: 1
Mult.: 1
Nein
N-Channel Si 8.8 A 133 V 1.8 MHz to 250 MHz 21.1 dB 115 W - 40 C + 150 C Through Hole TO-220-3 Tube
NXP Semiconductors MOSFET HF-Transistoren Wideband Airfast RF Power LDMOS Transistor 136-941 MHz, 6.0 W, 7.5 V 49Auf Lager
1.000Auf Bestellung
Min.: 1
Mult.: 1
: 1.000

N-Channel Si 4.7 A 30 V 136 MHz to 941 MHz 16.2 dB 6.5 W - 40 C + 150 C SMD/SMT HVSON-16 Reel, Cut Tape
NXP Semiconductors MOSFET HF-Transistoren Airfast Wideband RF Power LDMOS Transistor, 136-520 MHz, 31 W, 13.6 V 10Auf Lager
Min.: 1
Mult.: 1
: 500

N-Channel Si 7.5 A 40 V 136 MHz to 520 MHz 17.7 dB 33 W - 40 C + 150 C SMD/SMT TO-270-2 Reel, Cut Tape, MouseReel
NXP Semiconductors MOSFET HF-Transistoren Wideband RF Power LDMOS Transistor, 136-941 MHz, 7 W, 7.5 V 20Auf Lager
6.000erwartet ab 08.10.2026
Min.: 1
Mult.: 1
: 1.000

N-Channel Si 3 A 30 V 136 MHz to 941 MHz 15.2 dB 7.3 W - 40 C + 150 C SMD/SMT PLD-1.5 Reel, Cut Tape, MouseReel
NXP Semiconductors MOSFET HF-Transistoren Pulsed Lateral N-Channel RF Power MOSFET, 1090 MHz, 10 W, 50 V 1Auf Lager
Min.: 1
Mult.: 1
: 100

N-Channel Si 100 V 960 MHz to 1.4 GHz 25 dB 10 W - 65 C + 150 C Screw Mount PLD-1.5 Reel, Cut Tape, MouseReel
NXP Semiconductors MOSFET HF-Transistoren RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V Vorlaufzeit 15 Wochen
Min.: 1
Mult.: 1

N-Channel Si 30 A 133 V 1.8 MHz to 250 MHz 20.4 dB 330 W - 40 C + 150 C Through Hole TO-247-3 Tube
NXP Semiconductors MOSFET HF-Transistoren RF Power LDMOS Transistor for Consumer and Commercial Cooking, 1.8-50 MHz, 300 W CW, 50 V
238erwartet ab 08.10.2026
Min.: 1
Mult.: 1
N-Channel Si 1.8 MHz to 50 MHz 28.2 dB 330 W + 150 C Through Hole TO-247-3 Tube
NXP Semiconductors MOSFET HF-Transistoren Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V Vorlaufzeit 15 Wochen
Min.: 1
Mult.: 1
: 50

N-Channel Si 43 A 179 V 1.8 MHz to 400 MHz 25.1 dB 1.8 kW - 40 C + 150 C Screw Mount NI-1230H-4 Reel, Cut Tape
NXP Semiconductors MOSFET HF-Transistoren Airfast RF Power LDMOS Transistor, 720-960 MHz, 2 W Avg., 48 V Nicht-auf-Lager-Vorlaufzeit 15 Wochen
Min.: 1
Mult.: 1
: 1.000

N-Channel Si 64 mA 105 V 728 MHz to 960 MHz 19.1 dB 2 W - 40 C + 150 C SMD/SMT PQFN-24 Reel, Cut Tape, MouseReel
NXP Semiconductors MOSFET HF-Transistoren Airfast Wideband RF Power LDMOS Transistor, 764-941 MHz, 31 W, 13.6 V Nicht-auf-Lager-Vorlaufzeit 15 Wochen
Min.: 1
Mult.: 1
: 500

N-Channel Si 10 A 40 V 764 MHz to 941 MHz 15.7 dB 32 W - 40 C + 150 C SMD/SMT TO-270-2 Reel, Cut Tape, MouseReel
NXP Semiconductors MOSFET HF-Transistoren Lateral N-Channel Broadband RF Power MOSFET, 520 MHz, 8 W, 12.5 V Nicht-auf-Lager-Vorlaufzeit 15 Wochen
Min.: 1
Mult.: 1
: 1.000

N-Channel Si 4 A 40 V 520 MHz 13 dB 8 W - 65 C + 150 C SMD/SMT PLD-1.5 Reel, Cut Tape, MouseReel