Tube Transistors MOSFET RF

Résultats: 44
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Qté. RoHS Modèle de ECAO Polarité du transistor
Technologie
Id - Courant continu de fuite
Vds - Tension de rupture drain-source
Rds On - Résistance drain-source
Fréquence de fonctionnement
Gain
Alimentation en sortie
Température de fonctionnement min.
Température de fonctionnement max.
Style de montage
Package/Boîte
Conditionnement
STMicroelectronics Transistors MOSFET RF RF Pwr Transistors LDMOST Plastic N Ch
Fiche technique
1.549En stock
Min. : 1
Mult. : 1

N-Channel Si 5 A 25 V 1 GHz 11.5 dB 8 W - 65 C + 150 C SMD/SMT PowerSO-10RF-Formed-4 Tube
STMicroelectronics Transistors MOSFET RF RF Pwr Transistors LDMOST Plastic Fam
Fiche technique
872En stock
Min. : 1
Mult. : 1

N-Channel Si 7 A 65 V 1 GHz 14.3 dB 60 W - 65 C + 150 C SMD/SMT PowerSO-10RF-Formed-4 Tube
STMicroelectronics Transistors MOSFET RF RF POWER TRANS
Fiche technique
1.497En stock
Min. : 1
Mult. : 1

N-Channel Si 4 A 40 V 1 GHz 17 dB 8 W - 65 C + 150 C SMD/SMT PowerSO-10RF-Formed-4 Tube
STMicroelectronics Transistors MOSFET RF RF POWER TRANS
Fiche technique
6.627En stock
Min. : 1
Mult. : 1

N-Channel Si 2.5 A 40 V 1 GHz 17 dB 3 W - 65 C + 150 C SMD/SMT PowerSO-10RF-Formed-4 Tube
STMicroelectronics Transistors MOSFET RF POWER R.F. N-Ch Trans
Fiche technique
613En stock
Min. : 1
Mult. : 1

N-Channel Si 8 A 40 V 870 MHz 14.9 dB 35 W - 65 C + 165 C SMD/SMT PowerSO-12 Tube
STMicroelectronics Transistors MOSFET RF RF Pwr Transistors LDMOST Plastic N Ch
Fiche technique
214En stock
Min. : 1
Mult. : 1

N-Channel Si 7 A 40 V 1 GHz 14.5 dB 25 W - 65 C + 150 C SMD/SMT PowerSO-10RF-Formed-4 Tube

Microchip Technology Transistors MOSFET RF RF MOSFET (VDMOS) 1000 V 150 W 65 MHz TO-247 Common Source
Fiche technique
70En stock
Min. : 1
Mult. : 1

N-Channel Si 6.5 A 1 kV 65 MHz 13 dB 150 W - 55 C + 150 C Through Hole TO-247-3 Tube
STMicroelectronics Transistors MOSFET RF POWER RF Transistor
Fiche technique
167En stock
Min. : 1
Mult. : 1

N-Channel Si 5 A 40 V 1 GHz 14 dB 15 W - 65 C + 150 C SMD/SMT PowerSO-10RF-Formed-4 Tube
STMicroelectronics Transistors MOSFET RF POWER RF Transistor
Fiche technique
148En stock
Min. : 1
Mult. : 1

N-Channel Si 7 A 40 V 1 GHz 14.5 dB 25 W - 65 C + 150 C SMD/SMT PowerSO-10RF-Straight-4 Tube
STMicroelectronics Transistors MOSFET RF POWER R.F.
Fiche technique
472En stock
Min. : 1
Mult. : 1

N-Channel Si 2.5 A 40 V 1 GHz 17 dB 3 W - 65 C + 150 C SMD/SMT PowerSO-10RF-Straight-4 Tube
Microchip Technology ARF468AG
Microchip Technology Transistors MOSFET RF RF MOSFET (VDMOS) 500 V 270 W 45 MHz TO-264
Fiche technique
11En stock
Min. : 1
Mult. : 1

Si Tube
Microchip Technology ARF465AG
Microchip Technology Transistors MOSFET RF RF MOSFET (VDMOS) 1200 V 150 W 60 MHz TO-247 Common Source
Fiche technique
281En stock
Min. : 1
Mult. : 1

N-Channel Si 6 A 1.2 kV 60 MHz 13 dB 150 W - 55 C + 150 C Through Hole Tube
STMicroelectronics Transistors MOSFET RF RF POWER transistor LDMOST family N-Chan
Fiche technique
115En stock
Min. : 1
Mult. : 1

N-Channel Si 4 A 25 V 1 GHz 12 dB 3 W - 65 C + 150 C SMD/SMT PowerSO-10RF-Formed-4 Tube
Microchip Technology ARF465BG
Microchip Technology Transistors MOSFET RF RF MOSFET (VDMOS) 1200 V 150 W 60 MHz TO-247 Common Source
Fiche technique
27En stock
Min. : 1
Mult. : 1

N-Channel Si 6 A 1.2 kV 60 MHz 13 dB 150 W - 55 C + 150 C Through Hole Tube


STMicroelectronics Transistors MOSFET RF N-Ch MOS HF/VHF/ RF 300W 15dB 175MHz
Fiche technique
132En stock
Min. : 1
Mult. : 1

N-Channel Si 40 A 125 V 250 MHz 16 dB 300 W + 150 C SMD/SMT M244 Tube
NXP Semiconductors Transistors MOSFET RF Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
Fiche technique
3.574En stock
Min. : 1
Mult. : 1

N-Channel Si 8.8 A 133 V 1.8 MHz to 250 MHz 21.1 dB 115 W - 40 C + 150 C Through Hole TO-220-3 Tube
NXP Semiconductors Transistors MOSFET RF RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V
Fiche technique
354En stock
Min. : 1
Mult. : 1

N-Channel Si 30 A 133 V 1.8 MHz to 250 MHz 20.4 dB 330 W - 40 C + 150 C Through Hole TO-247-3 Tube

Microchip Technology Transistors MOSFET RF RF MOSFET (VDMOS) 500 V 150 W 65 MHz TO-247 Common Source
Fiche technique
121En stock
Min. : 1
Mult. : 1

N-Channel Si 14 A 500 V 65 MHz 13 dB 150 W - 55 C + 150 C Through Hole TO-247-3 Tube

Microchip Technology Transistors MOSFET RF RF MOSFET (VDMOS) 500 V 150 W 65 MHz TO-247 Common Source
Fiche technique
70En stock
Min. : 1
Mult. : 1

N-Channel Si 14 A 500 V 65 MHz 13 dB 150 W - 55 C + 150 C Through Hole TO-247-3 Tube
STMicroelectronics Transistors MOSFET RF POWER RF Transistor
Fiche technique
586En stock
Min. : 1
Mult. : 1

N-Channel Si 2.5 A 65 V 760 mOhms 1 GHz 16.5 dB 18 W - 65 C + 150 C SMD/SMT PowerSO-10RF-Formed-4 Tube
STMicroelectronics Transistors MOSFET RF RF Pwr Transistors LDMOST Plastic N Ch
Fiche technique
266En stock
Min. : 1
Mult. : 1

N-Channel Si 4 A 65 V 1 GHz 14 dB 30 W - 65 C + 150 C SMD/SMT PowerSO-10RF-Formed-4 Tube
STMicroelectronics Transistors MOSFET RF RF PWR N-Ch MOS 350W 15dB 175MHz
Fiche technique
78En stock
Min. : 1
Mult. : 1

N-Channel Si 40 A 130 V 175 MHz 15 dB 350 W + 200 C Screw Mount Tube
Microchip Technology ARF461BG
Microchip Technology Transistors MOSFET RF RF MOSFET (VDMOS) 1000 V 150 W 65 MHz TO-247 Common Source
Fiche technique
54En stock
Min. : 1
Mult. : 1

N-Channel Si 6.5 A 1 kV 65 MHz 13 dB 150 W - 55 C + 150 C Through Hole Tube

Microchip Technology Transistors MOSFET RF RF MOSFET (VDMOS) 500 V 100 W 100 MHz TO-247 Common Source
Fiche technique
37En stock
Min. : 1
Mult. : 1

N-Channel Si 9 A 500 V 100 MHz 15 dB 100 W - 55 C + 150 C Through Hole TO-247-3 Tube
NXP Semiconductors Transistors MOSFET RF Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
Fiche technique
252En stock
Min. : 1
Mult. : 1
Non
N-Channel Si 8.8 A 133 V 1.8 MHz to 250 MHz 21.1 dB 115 W - 40 C + 150 C Through Hole TO-220-3 Tube