Industrial Product Solutions

ROHM Industrial Product Solutions supply a quality lineup of products from passive devices and discrete to ICs and modules, providing total solutions at the system level. The ROHM Industrial Product Solutions have achieved high quality, technological capability, and a stable supply of products (over ten years), creating innovative solutions in a highly integrated production system. These products meet the rapidly evolving needs of the industrial equipment market. ROHM continues to leverage its strengths providing optimized solutions tailored to customer sets.

Résultats: 10
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Description Fiche technique Disponibilité Prix (EUR) Filtrer les résultats dans le tableau par prix unitaire basé sur votre quantité.
Qté. RoHS Modèle de ECAO Style de montage
Package/Boîte
Polarité du transistor
Nombre de canaux
Vds - Tension de rupture drain-source
Id - Courant continu de fuite
Rds On - Résistance drain-source
Vgs - Tension grille-source
Vgs th - Tension de seuil grille-source
Qg - Charge de grille
Température de fonctionnement min.
Température de fonctionnement max.
Pd - Dissipation d’énergie
Mode canal
ROHM Semiconductor SiC MOSFET N-Ch 1200V SiC 72A 30mOhm TrenchMOS
Fiche technique
695En stock
Min. : 1
Mult. : 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 72 A 39 mOhms - 4 V, + 22 V 5.6 V 131 nC - 55 C + 175 C 339 W Enhancement
ROHM Semiconductor SiC MOSFET N-Ch 1200V SiC 31A 80mOhm TrenchMOS
Fiche technique
1.197En stock
Min. : 1
Mult. : 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 31 A 104 mOhms - 4 V, + 22 V 5.6 V 60 nC - 55 C + 175 C 165 W Enhancement
ROHM Semiconductor SiC MOSFET 1700V 3.7A N-MOSFET Silicon Carbide SiC
Fiche technique
1.462En stock
Min. : 1
Mult. : 1

Through Hole TO-3PFM-3 N-Channel 1 Channel 1.7 kV 3.7 A 1.5 Ohms - 6 V, + 22 V 4 V 14 nC - 55 C + 175 C 35 W Enhancement
ROHM Semiconductor SiC MOSFET N-Ch 650V SiC 70A 30mOhm TrenchMOS
Fiche technique
102En stock
Min. : 1
Mult. : 1
Through Hole TO-247-3 N-Channel 1 Channel 650 V 70 A 39 mOhms - 4 V, + 22 V 5.6 V 104 nC - 55 C + 175 C 262 W Enhancement
ROHM Semiconductor SiC MOSFET N-Ch 1200V SiC 55A 40mOhm TrenchMOS
Fiche technique
322En stock
Min. : 1
Mult. : 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 55 A 52 mOhms - 4 V, + 22 V 5.6 V 107 nC - 55 C + 175 C 262 W Enhancement
ROHM Semiconductor SiC MOSFET N-Ch 650V SiC 39A 60mOhm TrenchMOS
Fiche technique
759En stock
Min. : 1
Mult. : 1
Through Hole TO-247-3 N-Channel 1 Channel 650 V 39 A 78 mOhms - 4 V, + 22 V 5.6 V 58 nC + 175 C 165 W Enhancement
ROHM Semiconductor SiC MOSFET N-Ch 650V 30A Silicon Carbide SiC
Fiche technique
887En stock
Min. : 1
Mult. : 1

Through Hole TO-247N-3 N-Channel 1 Channel 650 V 30 A 104 mOhms - 4 V, + 22 V 5.6 V 48 nC + 175 C 134 W Enhancement
ROHM Semiconductor SiC MOSFET N-Ch 650V SiC 93A 22mOhm TrenchMOS
Fiche technique
5En stock
45013/03/2026 attendu
Min. : 1
Mult. : 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 93 A 28.6 mOhms - 4 V, + 22 V 5.6 V 133 nC - 55 C + 175 C 339 W Enhancement
ROHM Semiconductor SiC MOSFET N-Ch 650V SiC 21A 120mOhm TrenchMOS
Fiche technique
67En stock
45020/05/2026 attendu
Min. : 1
Mult. : 1
Through Hole TO-247-3 N-Channel 1 Channel 650 V 21 A 156 mOhms - 4 V, + 22 V 5.6 V 38 nC + 175 C 103 W Enhancement
ROHM Semiconductor SiC MOSFET N-Ch 1200V SiC 17A 160mOhm TrenchMOS
Fiche technique
24En stock
3.150Sur commande
Min. : 1
Mult. : 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 17 A 208 mOhms - 4 V, + 22 V 5.6 V 42 nC + 175 C 103 W Enhancement