D2 Series N-Channel Depletion Mode Power MOSFETs

IXYS D2 Series 100V to 1700V N-Channel Depletion Mode Power MOSFETs are depletion mode devices that operate in a normally "on" mode, requiring zero turn-on voltage at the gate terminal. IXYS D2 series provides blocking voltages up to 1700V and low drain-to-source resistances to provide simplified control and reduced power dissipation in systems that are continuously “on," like emergency or burglar alarms.

Résultats: 34
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Description Fiche technique Disponibilité Prix (EUR) Filtrer les résultats dans le tableau par prix unitaire basé sur votre quantité.
Qté. RoHS Modèle de ECAO Technologie
Style de montage
Package/Boîte
Polarité du transistor
Nombre de canaux
Vds - Tension de rupture drain-source
Id - Courant continu de fuite
Rds On - Résistance drain-source
Vgs - Tension grille-source
Vgs th - Tension de seuil grille-source
Qg - Charge de grille
Température de fonctionnement min.
Température de fonctionnement max.
Pd - Dissipation d’énergie
Mode canal
Conditionnement
IXYS MOSFET N-CH MOSFETS 500V 800MA
Fiche technique
21.714En stock
Min. : 1
Mult. : 1

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 500 V 800 mA 4.6 Ohms - 20 V, 20 V 4.5 V 12.7 nC - 55 C + 150 C 60 W Depletion Tube
IXYS MOSFET N-CH MOSFETS (D2) 1000V 3A
Fiche technique
867En stock
Min. : 1
Mult. : 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1 kV 3 A 6 Ohms - 20 V, 20 V 4.5 V 37.5 nC - 55 C + 150 C 125 W Depletion Tube
IXYS MOSFET D2 Depletion Mode Power MOSFET
Fiche technique
767En stock
21011/03/2026 attendu
Min. : 1
Mult. : 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 1 kV 10 A 1.5 Ohms - 20 V, 20 V 4.5 V 200 nC - 55 C + 150 C 695 W Depletion Tube
IXYS MOSFET TO263 1KV 3A N-CH DEPL
Fiche technique
587En stock
Min. : 1
Mult. : 1

Si SMD/SMT TO-263HV-3 N-Channel 1 Channel 1 kV 3 A 6 Ohms - 20 V, 20 V 4.5 V 37.5 nC - 55 C + 150 C 125 W Depletion Tube

IXYS MOSFET N-CH MOSFETS (D2) 500V 6A
Fiche technique
293En stock
Min. : 1
Mult. : 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 6 A 550 mOhms - 20 V, 20 V 4.5 V 96 nC - 55 C + 150 C 300 W Depletion Tube

IXYS MOSFET 6Amps 1000V
Fiche technique
381En stock
Min. : 1
Mult. : 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 6 A 2.2 Ohms - 20 V, 20 V 2.5 V 95 nC - 55 C + 150 C 300 W Depletion Tube
IXYS MOSFET N-CH MOSFETS (D2) 500V 6A
Fiche technique
451En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 6 A 550 mOhms - 20 V, 20 V 4.5 V 96 nC - 55 C + 150 C 300 W Depletion Tube

IXYS MOSFET N-channel MOSFET
Fiche technique
311En stock
Min. : 1
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Si Through Hole TO-247-3 N-Channel 1 Channel 1.7 kV 2 A 6.5 Ohms - 20 V, 20 V 4.5 V 110 nC - 55 C + 150 C 568 W Enhancement Tube
IXYS MOSFET 1700V 2A
Fiche technique
189En stock
Min. : 1
Mult. : 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 1.7 kV 2 A 6.5 Ohms - 20 V, 20 V 4.5 V 110 nC - 55 C + 150 C 568 W Depletion Tube
IXYS MOSFET N-CH MOSFETS (D2) 500V 3A
Fiche technique
3.724En stock
Min. : 1
Mult. : 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 500 V 3 A 1.5 Ohms - 20 V, 20 V 4.5 V 40 nC - 55 C + 150 C 125 W Depletion Tube
IXYS MOSFET TO263 1KV 6A N-CH DEPL
Fiche technique
695En stock
Min. : 1
Mult. : 1

Si SMD/SMT TO-263AA-3 N-Channel 1 Channel 1 kV 6 A 2.2 Ohms - 20 V, 20 V 2.5 V 95 nC - 55 C + 150 C 300 W Depletion Tube

IXYS MOSFET N-CH 500V 16A MOSFET
Fiche technique
1.139En stock
Min. : 1
Mult. : 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 16 A 300 mOhms - 20 V, 20 V 4 V 199 nC - 55 C + 150 C 695 W Depletion Tube
IXYS MOSFET N-CH MOSFETS (D2) 1000V 1.6A
Fiche technique
592En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 1 kV 1.6 A 10 Ohms - 20 V, 20 V 4.5 V 27 nC - 55 C + 150 C 100 W Depletion Tube
IXYS MOSFET N-CH MOSFETS (D2) 1000V 6A
Fiche technique
3.908En stock
Min. : 1
Mult. : 1

Si SMD/SMT TO-263AA-3 N-Channel 1 Channel 1 kV 6 A 2.2 Ohms - 20 V, 20 V 2.5 V 95 nC - 55 C + 150 C 300 W Depletion Tube
IXYS MOSFET N-CH MOSFETS (D2) 1000V 800MA
Fiche technique
1.882En stock
20003/04/2026 attendu
Min. : 1
Mult. : 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1 kV 800 mA 21 Ohms - 20 V, 20 V 4 V 14.6 nC - 55 C + 150 C 60 W Enhancement Tube
IXYS MOSFET N-CH MOSFETS (D2) 1000V 800MA
Fiche technique
1.796En stock
Min. : 1
Mult. : 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1 kV 1.6 A 10 Ohms - 20 V, 20 V 4.5 V 27 nC - 55 C + 150 C 100 W Depletion Tube
IXYS MOSFET N-CH MOSFETS (D2) 500V 6A
Fiche technique
838En stock
Min. : 1
Mult. : 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 500 V 6 A 550 mOhms - 20 V, 20 V 4.5 V 96 nC - 55 C + 150 C 300 W Depletion Tube

IXYS MOSFET TO247 1KV 10A N-CH DEPL
Fiche technique
458En stock
Min. : 1
Mult. : 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 10 A 1.5 Ohms - 20 V, 20 V 4.5 V 200 nC - 55 C + 150 C 695 W Depletion Tube

IXYS MOSFET N-CH 200V 16A MOSFET
Fiche technique
614En stock
Min. : 1
Mult. : 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 16 A 80 mOhms - 20 V, 20 V 4.5 V 208 nC - 55 C + 150 C 695 W Depletion Tube
IXYS MOSFET N-CH MOSFETS 1000V 800MA
Fiche technique
1.865En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 1 kV 800 mA 21 Ohms - 20 V, 20 V 4 V 14.6 nC - 55 C + 150 C 60 W Depletion Tube
IXYS MOSFET N-CH MOSFETS (D2) 1000V 3A
Fiche technique
624En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 1 kV 3 A 6 Ohms - 20 V, 20 V 4.5 V 37.5 nC - 55 C + 150 C 125 W Depletion Tube
IXYS MOSFET N-CH MOSFETS (D2) 1000V 6A
Fiche technique
441En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 1 kV 6 A 2.2 Ohms - 20 V, 20 V 2.5 V 95 nC - 55 C + 150 C 300 W Depletion Tube
IXYS MOSFET 8mAmps 1000V
Fiche technique
6.907En stock
Min. : 1
Mult. : 1
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 1 kV 800 mA 21 Ohms - 20 V, 20 V 2 V 14.6 nC - 55 C + 150 C 60 W Depletion Tube
IXYS MOSFET N-CH MOSFETS (D2) 1000V 1.6A
Fiche technique
5.904En stock
Min. : 1
Mult. : 1

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 1 kV 1.6 A 10 Ohms - 20 V, 20 V 4.5 V 27 nC - 55 C + 150 C 100 W Depletion Tube
IXYS MOSFET TO263 1KV .8A N-CH HIVOLT
Fiche technique
441En stock
Min. : 1
Mult. : 1

Si SMD/SMT TO-263HV-3 N-Channel 1 Channel 1 kV 800 mA 21 Ohms - 20 V, 20 V 4 V 14.6 nC - 55 C + 150 C 60 W Depletion Tube