IGBT à tranchée et arrêt de champ 650 V RGW

Les IGBT à arrêt de champ et grille en tranchée 650 V RGW de ROHM Semiconductor offrent une faible tension de saturation collecteur-émetteur dans un petit boîtier. Les IGBT RGW disposent d'une commutation à haut débit, d'une faible perte de commutation et d'une FRD de récupération très rapide et progressive intégrée. Les IGBT à tranchée et arrêt de champ 650 V RGW de ROHM sont idéaux pour les onduleurs solaires, les onduleurs, les soudure, les IH et les applications PFC.

Résultats: 51
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Description Fiche technique Disponibilité Prix (EUR) Filtrer les résultats dans le tableau par prix unitaire basé sur votre quantité.
Qté. RoHS Modèle de ECAO Technologie
Package/Boîte
Style de montage
Configuration
Collecteur - Tension de l'émetteur VCEO max.
Tension de saturation collecteur-émetteur
Tension de l'émetteur de porte max.
Courant collecteur continu de 25 C
Pd - Dissipation d’énergie
Température de fonctionnement min.
Température de fonctionnement max.
Conditionnement
ROHM Semiconductor IGBTs TO247 650V 50A TRNCH
Fiche technique
840En stock
Min. : 1
Mult. : 1

Si TO-247GE-3 Through Hole Single 650 V 2.1 V 30 V 85 A 277 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs 650V 30A TO-3PFM Field Stp Trnch IGBT
Fiche technique
448En stock
Min. : 1
Mult. : 1

Si TO-3PFM-3 Through Hole Single 650 V 1.9 V 30 V 33 A 72 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs 650V 30A TO-3PFM Field Stp Trnch IGBT
Fiche technique
446En stock
Min. : 1
Mult. : 1

Si TO-3PFM-3 Through Hole Single 650 V 1.9 V 30 V 33 A 72 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs 650V 40A TO-3PFM Field Stp Trnch IGBT
Fiche technique
449En stock
Min. : 1
Mult. : 1

Si TO-3PFM-3 Through Hole Single 650 V 1.9 V 30 V 39 A 81 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs 650V 40A TO-3PFM Field Stp Trnch IGBT
Fiche technique
358En stock
Min. : 1
Mult. : 1

Si TO-3PFM-3 Through Hole Single 650 V 1.9 V 30 V 39 A 81 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs High-Speed Fast Switching Type, 650V 50A, Automotive Hybrid IGBT with Built-In SiC-SBD
Fiche technique
Commentaire Produit
458En stock
Min. : 1
Mult. : 1

SiC TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 96 A 254 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs High-Speed Fast Switching Type, 650V 18A, TO-3PFM, Field Stop Trench IGBT
Fiche technique
440En stock
Min. : 1
Mult. : 1

Si TO-3PFM-3 Through Hole Single 650 V 1.9 V 30 V 30 A 67 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs High-Speed Fast Switch 650V 20A FRD Built-in TO-247N Field Stop Trench IGBT
Fiche technique
600En stock
Min. : 1
Mult. : 1

Si TO-247GE-3 Through Hole Single 650 V 1.9 V 30 V 40 A 136 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs High-Speed Fast Switch 650V 25A FRD Built-in TO-247N Field Stop Trench IGBT
Fiche technique
600En stock
Min. : 1
Mult. : 1

Si TO-247GE-3 Through Hole Single 650 V 1.9 V 30 V 50 A 156 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs High-Speed Fast Switch 650V 75A FRD Built-in TO-247N Field Stop Trench IGBT
Fiche technique
590En stock
Min. : 1
Mult. : 1

Si TO-247GE-3 Through Hole Single 650 V 1.9 V 30 V 132 A 348 W - 40 C + 175 C Bulk
ROHM Semiconductor IGBTs High-Speed Fast Switching Type, 650V 75A, TO-247N, Field Stop Trench IGBT
Fiche technique
600En stock
Min. : 1
Mult. : 1

Si TO-247GE-3 Through Hole Single 650 V 1.9 V 30 V 132 A 348 W - 40 C + 175 C Bulk
ROHM Semiconductor IGBTs High-Speed Fast Switching Type, 650V 20A, TO-247N, Field Stop Trench IGBT
Fiche technique
475En stock
Min. : 1
Mult. : 1

Si TO-247GE-3 Through Hole Single 650 V 1.9 V 30 V 40 A 136 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs High-Speed Fast Switching Type, 650V 25A, TO-247N, Field Stop Trench IGBT
Fiche technique
600En stock
Min. : 1
Mult. : 1

Si TO-247GE-3 Through Hole Single 650 V 1.9 V 30 V 50 A 156 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs TO247 650V 30A TRNCH
Fiche technique
1.019En stock
Min. : 1
Mult. : 1

Si TO-247GE-3 Through Hole Single 650 V 2.1 V 30 V 58 A 194 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs TO247 650V 30A TRNCH
Fiche technique
1.153En stock
Min. : 1
Mult. : 1

Si TO-247GE-3 Through Hole Single 650 V 2.1 V 30 V 58 A 194 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs High-Speed Fast Switching Type, 650V 20A, FRD Built-in, LPDL, Field Stop Trench IGBT for Automotive: RGW40NL65DHRB is a IGBT with low collector - emitter saturation voltage, suitable for On & Off Board Chagers, DC-DC Converters, PFC, Industrial Inver
Fiche technique
2.000En stock
Min. : 1
Mult. : 1
Bobine: 1.000

Si TO-263-3 SMD/SMT Single 650 V 1.9 V 30 V 48 A 144 W - 40 C + 175 C Reel, Cut Tape
ROHM Semiconductor IGBTs High-Speed Fast Switching Type, 650V 20A, LPDL, Field Stop Trench IGBT for Automotive: RGW40NL65HRB is a IGBT with low collector - emitter saturation voltage, suitable for On & Off Board Chagers, DC-DC Converters, PFC, Industrial Inverter. This produ
Fiche technique
1.990En stock
Min. : 1
Mult. : 1
Bobine: 1.000

Si TO-263-3 SMD/SMT Single 650 V 1.9 V 30 V 48 A 144 W - 40 C + 175 C Reel, Cut Tape
ROHM Semiconductor IGBTs High-Speed Fast Switching Type, 650V 25A, FRD Built-in, LPDL, Field Stop Trench IGBT for Automotive: RGW50NL65DHRB is a IGBT with low collector - emitter saturation voltage, suitable for On & Off Board Chagers, DC-DC Converters, PFC, Industrial Inver
Fiche technique
2.000En stock
Min. : 1
Mult. : 1
Bobine: 1.000

Si TO-263-3 SMD/SMT Single 650 V 1.9 V 30 V 57 A 165 W - 40 C + 175 C Reel, Cut Tape
ROHM Semiconductor IGBTs High-Speed Fast Switching Type, 650V 25A, LPDL, Field Stop Trench IGBT for Automotive: RGW50NL65HRB is a IGBT with low collector - emitter saturation voltage, suitable for On & Off Board Chagers, DC-DC Converters, PFC, Industrial Inverter. This produ
Fiche technique
2.000En stock
Min. : 1
Mult. : 1
Bobine: 1.000

Si TO-263-3 SMD/SMT Single 650 V 1.9 V 30 V 57 A 165 W - 40 C + 175 C Reel, Cut Tape
ROHM Semiconductor IGBTs High-Speed Fast Switching Type, 650V 30A, FRD Built-in, LPDL, Field Stop Trench IGBT for Automotive: RGW60NL65DHRB is a IGBT with low collector - emitter saturation voltage, suitable for On & Off Board Chagers, DC-DC Converters, PFC, Industrial Inver
Fiche technique
2.000En stock
Min. : 1
Mult. : 1
Bobine: 1.000

Si TO-263-3 SMD/SMT Single 650 V 1.9 V 30 V 67 A 187 W - 40 C + 175 C Reel, Cut Tape
ROHM Semiconductor IGBTs High-Speed Fast Switching Type, 650V 30A, LPDL, Field Stop Trench IGBT for Automotive: RGW60NL65HRB is a IGBT with low collector - emitter saturation voltage, suitable for On & Off Board Chagers, DC-DC Converters, PFC, Industrial Inverter. This produ
Fiche technique
1.990En stock
Min. : 1
Mult. : 1
Bobine: 1.000

Si TO-263-3 SMD/SMT Single 650 V 1.9 V 30 V 67 A 187 W - 40 C + 175 C Reel, Cut Tape
ROHM Semiconductor IGBTs High-Speed Fast Switching Type, 650V 40A, FRD Built-in, LPDL, Field Stop Trench IGBT for Automotive: RGW80NL65DHRB is a IGBT with low collector - emitter saturation voltage, suitable for On & Off Board Chagers, DC-DC Converters, PFC, Industrial Inver
Fiche technique
1.648En stock
Min. : 1
Mult. : 1
Bobine: 1.000

Si TO-263-3 SMD/SMT Single 650 V 1.9 V 30 V 83 A 227 W - 40 C + 175 C Reel, Cut Tape
ROHM Semiconductor IGBTs High-Speed Fast Switching Type, 650V 40A, LPDL, Field Stop Trench IGBT for Automotive: RGW80NL65HRB is a IGBT with low collector - emitter saturation voltage, suitable for On & Off Board Chagers, DC-DC Converters, PFC, Industrial Inverter. This produ
Fiche technique
1.981En stock
Min. : 1
Mult. : 1
Bobine: 1.000

Si TO-263-3 SMD/SMT Single 650 V 1.9 V 30 V 83 A 227 W - 40 C + 175 C Reel, Cut Tape
ROHM Semiconductor IGBTs High-Speed Fast Switching Type, 650V 40A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT
Fiche technique
840En stock
Min. : 1
Mult. : 1

Si TO-3PFM-3 Through Hole Single 650 V 1.9 V 30 V 39 A 81 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs TO3P 650V 16A TRNCH
Fiche technique
900En stock
Min. : 1
Mult. : 1

Si TO-3PFM-3 Through Hole Single 650 V 1.9 V 30 V 27 A 61 W - 40 C + 175 C Tube