CoolMOS™ C7 Power MOSFETs

Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.

Résultats: 78
Sélectionner Image Référence Fab. Description Fiche technique Disponibilité Prix (EUR) Filtrer les résultats dans le tableau par prix unitaire basé sur votre quantité. Qté. RoHS Modèle de ECAO Technologie Style de montage Package/Boîte Polarité du transistor Nombre de canaux Vds - Tension de rupture drain-source Id - Courant continu de fuite Rds On - Résistance drain-source Vgs - Tension grille-source Vgs th - Tension de seuil grille-source Qg - Charge de grille Température de fonctionnement min. Température de fonctionnement max. Pd - Dissipation d’énergie Mode canal Nom commercial Conditionnement
Infineon Technologies MOSFET HIGH POWER_NEW 2.774En stock
Min. : 1
Mult. : 1
Bobine: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 13 A 180 mOhms - 20 V, 20 V 3.5 V 24 nC - 55 C + 150 C 68 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 1.409En stock
Min. : 1
Mult. : 1
Bobine: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 24 A 84 mOhms - 20 V, 20 V 3 V 45 nC - 55 C + 150 C 128 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 2.460En stock
7.500Sur commande
Min. : 1
Mult. : 1
Bobine: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 13 A 180 mOhms - 20 V, 20 V 3 V 24 nC - 55 C + 150 C 68 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET N-Ch 650V 46A TO220-3 CoolMOS C7 335En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 46 A 40 mOhms - 20 V, 20 V 3 V 93 nC - 55 C + 150 C 227 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 650V 46A TO220-3 CoolMOS C7 774En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 46 A 40 mOhms - 20 V, 20 V 3 V 93 nC - 55 C + 150 C 227 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 650V 10A ThinPAK-4 CoolMOS C7 6.349En stock
Min. : 1
Mult. : 1
Bobine: 3.000

Si SMD/SMT VSON-4 N-Channel 1 Channel 650 V 10 A 230 mOhms - 20 V, 20 V 4 V 20 nC - 40 C + 150 C 67 W Enhancement CoolMOS Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET HIGH POWERNEW 901En stock
Min. : 1
Mult. : 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 24 A 84 mOhms - 20 V, 20 V 3 V 45 nC - 55 C + 150 C 128 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 490En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 33 A 58 mOhms - 20 V, 20 V 3 V 64 nC - 55 C + 150 C 171 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 2.662En stock
Min. : 1
Mult. : 1
Bobine: 3.000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 13 A 185 mOhms - 20 V, 20 V 3 V 24 nC - 40 C + 150 C 77 W Enhancement CoolMOS Reel, Cut Tape

Infineon Technologies MOSFET N-Ch 650V 75A TO247-3 CoolMOS C7 815En stock
Min. : 1
Mult. : 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 75 A 19 mOhms - 20 V, 20 V 3 V 215 nC - 55 C + 150 C 446 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 700V 46A TO247-4 636En stock
Min. : 1
Mult. : 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 46 A 40 mOhms - 20 V, 20 V 3 V 93 nC - 55 C + 150 C 227 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER BEST IN CLASS 494En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 12 A 84 mOhms - 20 V, 20 V 3 V 45 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER BEST IN CLASS 2.875En stock
Min. : 1
Mult. : 1
Bobine: 3.000

Si SMD/SMT VSON-4 N-Channel 1 Channel 650 V 12 A 173 mOhms - 20 V, 20 V 3 V 23 nC - 40 C + 150 C 75 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 700V 75A TO247-4 93En stock
Min. : 1
Mult. : 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 75 A 17 mOhms - 20 V, 20 V 3 V 215 nC - 55 C + 150 C 446 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER BEST IN CLASS 244En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 15 A 58 mOhms - 20 V, 20 V 3 V 64 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 1.244En stock
Min. : 1
Mult. : 1
Bobine: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 13 A 190 mOhms - 20 V, 20 V 3 V 23 nC - 55 C + 150 C 72 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 224En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 16 A 115 mOhms - 20 V, 20 V 3.5 V 68 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 221En stock
Min. : 1
Mult. : 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 33 A 58 mOhms - 20 V, 20 V 3 V 64 nC - 55 C + 150 C 171 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER_NEW 1.702En stock
Min. : 1
Mult. : 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 109 A 17 mOhms - 20 V, 20 V 3 V 240 nC - 55 C + 150 C 446 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 2.587En stock
Min. : 1
Mult. : 1
Bobine: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 35 A 60 mOhms - 20 V, 20 V 1.7 V 68 nC - 55 C + 150 C 162 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 1.418En stock
Min. : 1
Mult. : 1
Bobine: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 22 A 99 mOhms - 20 V, 20 V 3 V 42 nC - 55 C + 150 C 110 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 1.449En stock
2.00026/02/2026 attendu
Min. : 1
Mult. : 1
Bobine: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 706En stock
Min. : 1
Mult. : 1
Bobine: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 33 A 65 mOhms - 20 V, 20 V 4 V 64 nC - 55 C + 150 C 171 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 1.290En stock
Min. : 1
Mult. : 1
Bobine: 1.000

Si SMD/SMT TO-263 N-Channel 1 Channel 650 V 13 A 404 mOhms - 20 V, 20 V 3.5 V 23 nC - 55 C + 150 C 72 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 650V 11A DPAK-2 CoolMOS C7 2.739En stock
Min. : 1
Mult. : 1
Bobine: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 11 A 225 mOhms - 20 V, 20 V 4 V 20 nC - 55 C + 150 C 63 W Enhancement CoolMOS Reel, Cut Tape, MouseReel