MOSFET de puissance OptiMOS™ 5

Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) as well as motor control, solar micro inverters and fast switching DC/DC converter applications.
Learn More

Résultats: 81
Sélectionner Image Référence
 Fab.
Description Fiche technique Disponibilité Prix (EUR) Filtrer les résultats dans le tableau par prix unitaire basé sur votre quantité.
Qté. RoHS Modèle de ECAO Technologie
Style de montage
Package/Boîte
Polarité du transistor
Nombre de canaux
Vds - Tension de rupture drain-source
Id - Courant continu de fuite
Rds On - Résistance drain-source
Vgs - Tension grille-source
Vgs th - Tension de seuil grille-source
Qg - Charge de grille
Température de fonctionnement min.
Température de fonctionnement max.
Pd - Dissipation d’énergie
Mode canal
Qualification
Nom commercial
Conditionnement
Infineon Technologies MOSFET IFX FET >100-150V
Fiche technique
2.676En stock
MouseReel disponible
Min. : 1
Mult. : 1
Bobine: 2.000

Si SMD/SMT N-Channel 1 Channel 150 V 143 A 5.4 mOhms - 20 V, 20 V 4.6 V 55 nC - 55 C + 175 C 250 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET 60V
Fiche technique
2.869En stock
Min. : 1
Mult. : 1
Bobine: 2.000
Si SMD/SMT N-Channel 1 Channel 60 V 399 A 1.1 Ohms - 20 V, 20 V 3.3 V 110 nC - 55 C + 175 C 313 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET OptiMOS 5 Power-Transistor,60V
Fiche technique
300En stock
Min. : 1
Mult. : 1
Bobine: 3.000

Si SMD/SMT TSON-12 N-Channel 1 Channel 60 V 460 A 1.12 Ohms - 20 V, 20 V 2.8 V 168 nC - 55 C + 175 C 273 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET N-Ch 30V 100A TDSON-8 OptiMOS
Fiche technique
3.631En stock
MouseReel disponible
Min. : 1
Mult. : 1
Bobine: 5.000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 30 V 230 A 1.1 mOhms - 20 V, 20 V 2 V 72 nC - 55 C + 150 C 96 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET 40V
Fiche technique
21.428En stock
15.00024/12/2026 attendu
MouseReel disponible
Min. : 1
Mult. : 1
Bobine: 5.000

Si SMD/SMT TDSON-FL-8 N-Channel 1 Channel 40 V 100 A 2.2 mOhms - 20 V, 20 V 1.3 V 28 nC - 55 C + 175 C 79 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET 15V-30V
Fiche technique
14.297En stock
MouseReel disponible
Min. : 1
Mult. : 1
Bobine: 5.000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 30 V 72 A 3.7 mOhms - 20 V, 20 V 1.2 V 11.1 nC - 55 C + 150 C 30 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 30V 100A TDSON-8 OptiMOS
Fiche technique
7.552En stock
2.20002/03/2026 attendu
MouseReel disponible
Min. : 1
Mult. : 1
Bobine: 5.000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 30 V 100 A 1.6 mOhms - 20 V, 20 V 1.2 V 44 nC - 55 C + 150 C 69 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 60V 46A TDSON-8
Fiche technique
4.631En stock
5.00009/04/2026 attendu
MouseReel disponible
Min. : 1
Mult. : 1
Bobine: 5.000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 60 V 46 A 8 mOhms - 20 V, 20 V 2.1 V 15 nC - 55 C + 150 C 36 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 30V 40A TDSON-8 OptiMOS
Fiche technique
7.893En stock
MouseReel disponible
Min. : 1
Mult. : 1
Bobine: 5.000

Si SMD/SMT TSDSON-8 N-Channel 1 Channel 30 V 149 A 2 mOhms - 20 V, 20 V 2 V 44 nC - 55 C + 150 C 69 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET 15V-30V
Fiche technique
13.719En stock
MouseReel disponible
Min. : 1
Mult. : 1
Bobine: 5.000

Si SMD/SMT TSDSON-8 N-Channel 1 Channel 30 V 40 A 4.4 mOhms - 20 V, 20 V 2 V 11 nC - 55 C + 150 C 27 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 30V 40A TDSON-8 OptiMOS
Fiche technique
29.880En stock
MouseReel disponible
Min. : 1
Mult. : 1
Bobine: 5.000

Si SMD/SMT TSDSON-8 N-Channel 1 Channel 30 V 40 A 4.6 mOhms - 20 V, 20 V 2 V 17 nC - 55 C + 150 C 37 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET 60V
Fiche technique
1.671En stock
2.00026/02/2026 attendu
MouseReel disponible
Min. : 1
Mult. : 1
Bobine: 2.000

Si SMD/SMT N-Channel 1 Channel 60 V 454 A 800 uOhms - 20 V, 20 V 3.6 V 185 nC - 55 C + 150 C 278 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET > 60-80V
Fiche technique
955En stock
MouseReel disponible
Min. : 1
Mult. : 1
Bobine: 2.000

Si SMD/SMT N-Channel 1 Channel 80 V 333 A 1.3 mOhms - 20 V, 20 V 4.1 V 158 nC - 55 C + 150 C 278 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET >100-150V
Fiche technique
3.670En stock
Min. : 1
Mult. : 1
Bobine: 2.000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 150 V 190 A 4.3 mOhms - 20 V, 20 V 4.6 V 78 nC - 55 C + 175 C 319 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET IFX FET >100-150V
Fiche technique
1.781En stock
MouseReel disponible
Min. : 1
Mult. : 1
Bobine: 2.000

Si SMD/SMT N-Channel 1 Channel 150 V 122 A 6.3 mOhms - 20 V, 20 V 4.6 V 47 nC - 55 C + 175 C 214 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET 15V-30V
Fiche technique
5.133En stock
Min. : 1
Mult. : 1
Bobine: 5.000

Si SMD/SMT N-Channel 1 Channel 30 V 253 A 850 uOhms - 16 V, 16 V 2 V 64 nC - 55 C + 150 C 89 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET 60V
Fiche technique
3.262En stock
Min. : 1
Mult. : 1
Bobine: 5.000

Si SMD/SMT N-Channel 1 Channel 60 V 330 A 1.05 mOhms - 20 V, 20 V 3.3 V 115 nC - 55 C + 175 C 214 W Enhancement Reel, Cut Tape
Infineon Technologies IPP029N06NXKSA1
Infineon Technologies MOSFET OptiMOS Power-Transistor,60V
Fiche technique
400En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 84 A 2.9 mOhms - 20 V, 20 V 3.3 V 56 nC - 55 C + 175 C 38 W Enhancement OptiMOS Tube
Infineon Technologies IPP034N08N5XKSA1
Infineon Technologies MOSFET IFX FET > 60-80V
Fiche technique
141En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 120 A 3.4 mOhms - 20 V, 20 V 3.8 V 69 nC - 55 C + 175 C 167 W Enhancement Tube
Infineon Technologies IPP076N15N5XKSA1
Infineon Technologies MOSFET IFX FET >100-150V
Fiche technique
891En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 150 V 112 A 7.6 mOhms - 20 V, 20 V 4.6 V 49 nC - 55 C + 175 C 214 W Enhancement Tube
Infineon Technologies MOSFET IFX FET >80 - 100V
Fiche technique
158En stock
10.00015/10/2026 attendu
Min. : 1
Mult. : 1
Bobine: 5.000

Si SMD/SMT N-Channel 1 Channel 100 V 85 A 6.5 mOhms - 20 V, 20 V 3.8 V 34 nC - 55 C + 175 C 100 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET >80 - 100V
Fiche technique
104En stock
6.00010/09/2026 attendu
Min. : 1
Mult. : 1
Bobine: 6.000
Si SMD/SMT WHSON-8 N-Channel 1 Channel 100 V 13 A 6.5 mOhms - 20 V, 20 V 3.8 V 43 nC - 55 C + 175 C 2.5 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET > 60-80V
Fiche technique
102En stock
MouseReel disponible
Min. : 1
Mult. : 1
Bobine: 5.000

Si SMD/SMT N-Channel 1 Channel 80 V 101 A 5 mOhms - 20 V, 20 V 3.8 V 35 nC - 55 C + 175 C 100 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET > 60-80V
Fiche technique
12.000Sur commande
MouseReel disponible
Min. : 1
Mult. : 1
Bobine: 6.000

Si SMD/SMT WHSON-8 N-Channel 1 Channel 80 V 99 A - 20 V, 20 V 2.3 V - 55 C + 175 C Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET OptiMOS 5 Power-Transistor,60V
Fiche technique
2.99012/03/2026 attendu
Min. : 1
Mult. : 1
Bobine: 3.000

Si SMD/SMT TSON-12 N-Channel 1 Channel 60 V 510 A 1 mOhms - 20 V, 20 V 2.8 V 190 nC - 55 C + 175 C 300 W Enhancement OptiMOS Reel, Cut Tape