onsemi FFSx0665B-F085 650V SiC Schottky Diodes

onsemi FFSx0665B-F085 650V, 6A Silicon Carbide Schottky Diodes use a technology that provides superior switching performance and higher reliability. onsemi FFSx0665B-F085 SiC Diodes feature temperature-independent switching characteristics, no reverse recovery current, and excellent thermal performance. Additional benefits include the highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. The FFSx0665B-F085 650V, 6A SiC Schottky Diodes are available in a D2PAK-3 package.

Features

  • +175°C maximum junction temperature
  • 24.5mJ avalanche rated
  • High surge current capacity
  • Positive temperature coefficient
  • Ease of paralleling
  • No reverse recovery / no forward recovery
  • AEC-Q101 qualified and PPAP capable
  • Lead-free
  • Halogen-free/BFR-free
  • RoHS compliant

Applications

  • Automotive electric vehicles and hybrid electric vehicles (EV and HEV)
    • Onboard chargers
    • DC-DC converters

Electrical Connection

Location Circuit - onsemi FFSx0665B-F085 650V SiC Schottky Diodes
View Results ( 2 ) Page
Numéro de pièce Fiche technique Package/Boîte Ifsm - Courant de surtension direct Pd - Dissipation d’énergie
FFSB0665B-F085 FFSB0665B-F085 Fiche technique D2PAK-2 45 A 61 W
FFSD0665B-F085 FFSD0665B-F085 Fiche technique DPAK-3 (TO-252-3) 28 A 75 W
Publié le: 2019-11-07 | Mis à jour le: 2024-01-31