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Nexperia PMDXBx 20V Trench MOSFETs

Nexperia PMDXBx 20V Trench MOSFETs consist of enhancement mode field-effect transistors (FET) in leadless, ultra-small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic packages. The devices employ Trench MOSFET technology, have an exposed drain pad for excellent thermal conduction, provide >1kV HBM ESD protection, and offer 470mΩ drain-source on-state resistance. The PMDXBx MOSFETs are available in dual N- and P-channel versions. The Nexperia PMDXBx 20V Trench MOSFETs are ideal for relay drivers, high-speed line drivers, low-side load switches, and switching circuits.

Features

  • Trench MOSFET technology
  • Exposed drain pad for excellent thermal conduction
  • ElectroStatic Discharge (ESD) protection > 1kV HBM
  • Low drain-source on-state resistance (RDS(on))
  • 1.1mm x 1.0mm x 0.37mm DFN1010B-6 (SOT1216) package

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits

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Package Outline

Mechanical Drawing - Nexperia PMDXBx 20V Trench MOSFETs
View Results ( 6 ) Page
Numéro de pièce Fiche technique Vds - Tension de rupture drain-source Id - Courant continu de fuite Rds On - Résistance drain-source Vgs th - Tension de seuil grille-source Qg - Charge de grille
PMDXB950UPELZ PMDXB950UPELZ Fiche technique 20 V 500 mA 5 Ohms 950 mV 2.1 nC
PMDXB550UNEZ PMDXB550UNEZ Fiche technique 30 V 590 mA 670 mOhms 450 mV 1.05 nC
PMDXB1200UPEZ PMDXB1200UPEZ Fiche technique 30 V 410 mA 1.4 Ohms 950 mV 1.2 nC
PMDXB600UNELZ PMDXB600UNELZ Fiche technique 20 V 600 mA 470 mOhms, 470 mOhms 450 mV 700 pC
PMDXB600UNEZ PMDXB600UNEZ Fiche technique 20 V 600 mA 3 Ohms, 3 Ohms 450 mV 400 pC
PMDXB950UPEZ PMDXB950UPEZ Fiche technique 20 V 500 mA 5 Ohms 450 mV 2.1 nC
Publié le: 2015-05-28 | Mis à jour le: 2022-03-11