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Vishay Semiconductors Power Silicon Carbide Schottky Diodes

Vishay Semiconductors Power Silicon Carbide (SiC) Schottky Diodes are advanced, high‑performance rectifiers designed to deliver exceptional efficiency, ruggedness, and reliability in demanding power‑electronics applications. Built on wide-band-gap SiC technology, these Vishay diodes offer virtually zero reverse‑recovery charge, extremely fast switching capability, and temperature‑invariant performance, making the devices ideal for next‑generation high‑frequency power conversion systems.

These devices support high operating junction temperatures up to +175°C, ensuring stable operation in harsh thermal environments such as industrial, automotive, and renewable‑energy systems. The positive temperature coefficient of forward voltage allows easy paralleling, improving scalability and thermal balancing in high‑current designs.

Engineered for durability, Vishay SiC Schottky diodes exhibit low leakage current, high surge‑current capability, and extremely low switching and conduction losses. These characteristics maximize efficiency in AC/DC PFC stages, high‑frequency rectifiers, LLC resonant converters, DC/DC converters, UPS systems, telecom infrastructures, server power supplies, and solar inverter platforms.

Available in a wide range of current ratings (from 4A up to 200A) and reverse‑voltage capabilities around 650V, these diodes provide flexibility across diverse power stages. D2PAK 2L (TO-263AB 2L) packaging enables seamless integration into small‑form‑factor designs or high‑power industrial assemblies.

Across the entire family, Vishay emphasizes long‑term reliability, offering AEC‑Q101‑qualified variants, RoHS‑compliant construction, halogen‑free materials, and UL‑approved module options. These characteristics make the diodes well-suited for mission‑critical applications requiring long service life, thermal stability, and outstanding efficiency.

Features

  • Positive VF temperature coefficient for easy paralleling
  • Virtually no recovery tail and no switching losses
  • Temperature invariant switching behavior
  • Single circuit configuration
  • Low leakage current
  • Rugged, high surge capability
  • Low junction capacitance
  • Fast, stable reverse recovery
  • +175°C maximum operating junction temperature
  • AEC-Q101 qualified, meets JESD 201 class 2 whisker test (P/NHM3)
  • Meets JESD 201 class 1 A whisker test (non-automotive)
  • Meets Moisture Sensitivity Level (MSL) 1 per J-STD-020, LF maximum peak of +245°C
  • D2PAK 2L (TO-263AB 2L) package
  • Lead-free, Halogen-free, and RoHS-compliant

Applications

  • Power Factor Correction (PFC) circuits
  • High‑frequency rectification
  • LLC resonant converters
  • DC/DC converters
  • Solar inverter systems
  • Uninterruptible Power Supply (UPS) systems
  • Telecommunications power equipment
  • Server power supplies
  • Applications affected by silicon ultrafast recovery behavior

Specifications

  • 650V or 1200V reverse voltage options
  • 35µA to 550µA reverse current range
  • 1.3V to 1.36V forward voltage range
  • 39A to 180A forward surge current range
  • 6A to 30A forward current range
  • 59W to 250W power dissipation range
  • -55°C to +175°C operating temperature range
  • Matte tin-plated leads, solderable per J-STD-002 and JESD 22-B102

Schematic

Schematic - Vishay Semiconductors Power Silicon Carbide Schottky Diodes
View Results ( 16 ) Page
Numéro de pièce Fiche technique If - Courant direct Ir - Courant inverse Pd - Dissipation d’énergie Vf - Tension directe Vr - Tension inverse
VS-4C12ET07S2LHM3 VS-4C12ET07S2LHM3 Fiche technique 12 A 84 uA 91 W 1.3 V 650 V
VS-4C15ET12S2L-M3 VS-4C15ET12S2L-M3 Fiche technique 15 A 200 uA 167 W 1.36 V 1.2 kV
VS-4C15ET12S2LHM3 VS-4C15ET12S2LHM3 Fiche technique 15 A 200 uA 167 W 1.36 V 1.2 kV
VS-4C16ET07S2L-M3 VS-4C16ET07S2L-M3 Fiche technique 16 A 94 uA 103 W 1.3 V 650 V
VS-4C16ET07S2LHM3 VS-4C16ET07S2LHM3 Fiche technique 16 A 94 uA 103 W 1.3 V 650 V
VS-4C20ET07S2L-M3 VS-4C20ET07S2L-M3 Fiche technique 20 A 110 uA 125 W 1.33 V 650 V
VS-4C20ET07S2LHM3 VS-4C20ET07S2LHM3 Fiche technique 20 A 110 uA 125 W 1.33 V 650 V
VS-4C30ET07S2L-M3 VS-4C30ET07S2L-M3 Fiche technique 30 A 125 uA 167 W 1.33 V 650 V
VS-4C30ET07S2LHM3 VS-4C30ET07S2LHM3 Fiche technique 30 A 125 uA 167 W 1.33 V 650 V
VS-4C30ET12S2L-M3 VS-4C30ET12S2L-M3 Fiche technique 30 A 550 uA 250 W 1.36 V 1.2 kV
Publié le: 2026-01-30 | Mis à jour le: 2026-02-03