Retour à Taiwan Semiconductor

Taiwan Semiconductor BSSx N-Channel & P-Channel Power MOSFETs

Taiwan Semiconductor BSSx N-Channel and P-Channel Power MOSFETs feature a low drain-source on-state resistance (RDS(ON)), that minimizes conductive losses. The N-channel power MOSFETs enable a low gate charge for fast power switching. The BSSx power MOSFETs operate from -55°C to 150°C temperature range. These N-channel power MOSFETs are ideal for low side load switching, level shift circuits, and general switch circuits.

Features

  • Low RDS(ON) to minimize conductive losses
  • Logic level
  • Low gate charge for fast power switching
  • ESD protected 2.5KV (HBM)
  • -55°C to 150°C operating temperature range
  • RoHS compliant
  • Halogen-free according to IEC 61249-2-21

Applications

  • Low side Load switching
  • Level shift circuits
  • General switch circuits
View Results ( 4 ) Page
Numéro de pièce Fiche technique Vds - Tension de rupture drain-source Id - Courant continu de fuite Rds On - Résistance drain-source Vgs th - Tension de seuil grille-source Qg - Charge de grille Pd - Dissipation d’énergie Polarité du transistor Transconductance directe - min. Package/Boîte
BSS138 RFG BSS138 RFG Fiche technique 50 V 260 mA 2.5 Ohms 1.6 V 1 nC 357 mW N-Channel 0.8 S SOT-23-3
BSS84 RFG BSS84 RFG Fiche technique 60 V 150 mA 8 Ohms 2 V 1.9 nC 357 mW P-Channel 0.5 S SOT-23-3
BSS84W RFG BSS84W RFG Fiche technique 60 V 140 mA 8 Ohms 2 V 1.9 nC 298 mW P-Channel 0.5 S SOT-323-3
BSS123W RFG BSS123W RFG Fiche technique 100 V 160 mA 5 Ohms 2.5 V 2 nC 298 mW N-Channel 0.5 S SOT-323-3
Publié le: 2021-03-08 | Mis à jour le: 2022-03-11