STMicroelectronics N-Channel PowerMESH Power MOSFETs
STMicroelectronics N-Channel PowerMESH Power MOSFETs are designed with the STMicroelectronics consolidated strip-layout based MESH OVERLAY™ process. This process results in an advanced family of high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the proprietary edge termination structure, gives the lowest RDS(on) per area, unrivaled gate charge, and switching characteristics.
Features
- 100% avalanche tested
- Intrinsic capacitances and Qg minimized
- High-speed switching
- Fully isolated TO-3PF plastic packages
- Creepage distance path is 5.4mm (typ.) for TO-3PF
Applications
- Switching applications
Publié le: 2016-02-15
| Mis à jour le: 2022-03-11