onsemi UJ3N Normally-On JFET Transistors

onsemi UJ3N JFET Transistors are high-performance, SiC Normally-On Junction Gate Field-Effect Transistors with options ranging from 650V to 1700V. This series exhibits ultra-low on resistance (RDS(ON)), as low as 25mΩ, and low gate charge (QG), allowing for low conduction and reduced switching loss. The device's normally-on characteristics with low RDS(ON) at VGS = 0V are also ideal for current protection circuits without the need for active control. The UJ3N JFET transistors are also commonly used in series connection with a Si-MOSFET as robust "Supercascodes," giving all of the advantages of wide band-gap technology with very high operating voltages and easy gate drive.

Features

  • Ultra-low on resistance (RDS(ON)) and gate charge (QG)
  • Voltage controlled
  • +175°C maximum operating temperature
  • Extremely fast switching, not dependent on temperature
  • Low intrinsic capacitance
  • RoHS compliant

Applications

  • Overcurrent protection circuits
  • DC-AC inverters
  • Switch-mode power supplies
  • Power factor correction modules
  • Motor drives
  • Induction heating

Videos

View Results ( 5 ) Page
Numéro de pièce Id - Courant continu de fuite Rds On - Résistance drain-source Pd - Dissipation d’énergie Fiche technique
UJ3N065025K3S 85 A 25 mOhms 441 W UJ3N065025K3S Fiche technique
UJ3N120035K3S 63 A 35 mOhms 429 W UJ3N120035K3S Fiche technique
UJ3N065080K3S 32 A 80 mOhms 190 W UJ3N065080K3S Fiche technique
UJ3N120065K3S 34 A 90 mOhms 254 W UJ3N120065K3S Fiche technique
UJ3N120070K3S 33.5 A 70 mOhms 254 W UJ3N120070K3S Fiche technique
Publié le: 2018-10-09 | Mis à jour le: 2025-10-24