onsemi UJ3N Normally-On JFET Transistors
onsemi UJ3N JFET Transistors are high-performance, SiC Normally-On Junction Gate Field-Effect Transistors with options ranging from 650V to 1700V. This series exhibits ultra-low on resistance (RDS(ON)), as low as 25mΩ, and low gate charge (QG), allowing for low conduction and reduced switching loss. The device's normally-on characteristics with low RDS(ON) at VGS = 0V are also ideal for current protection circuits without the need for active control. The UJ3N JFET transistors are also commonly used in series connection with a Si-MOSFET as robust "Supercascodes," giving all of the advantages of wide band-gap technology with very high operating voltages and easy gate drive.Features
- Ultra-low on resistance (RDS(ON)) and gate charge (QG)
- Voltage controlled
- +175°C maximum operating temperature
- Extremely fast switching, not dependent on temperature
- Low intrinsic capacitance
- RoHS compliant
Applications
- Overcurrent protection circuits
- DC-AC inverters
- Switch-mode power supplies
- Power factor correction modules
- Motor drives
- Induction heating
Videos
Application Notes
View Results ( 5 ) Page
| Numéro de pièce | Id - Courant continu de fuite | Rds On - Résistance drain-source | Pd - Dissipation d’énergie | Fiche technique |
|---|---|---|---|---|
| UJ3N065025K3S | 85 A | 25 mOhms | 441 W | ![]() |
| UJ3N120035K3S | 63 A | 35 mOhms | 429 W | ![]() |
| UJ3N065080K3S | 32 A | 80 mOhms | 190 W | ![]() |
| UJ3N120065K3S | 34 A | 90 mOhms | 254 W | ![]() |
| UJ3N120070K3S | 33.5 A | 70 mOhms | 254 W | ![]() |
Publié le: 2018-10-09
| Mis à jour le: 2025-10-24

