MACOM X-Band GaN HEMTs & MMICs
MACOM X-Band Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) and Monolithic Microwave Integrated Circuits (MMICs) come with various solution platforms. That includes MMICs, internally matched GaN on SiC transistors (IM-FETs), and transistors. These multi-stage MMICs offer a variety of power levels, high gain, and high efficiency, while IM-FETs feature 50Ω building blocks in support of higher power systems. The transistors offer highly accurate modeling support that provides maximum flexibility to optimize amplifier design. The GaN has superior properties compared to silicon or gallium arsenide (GaAs), including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
MACOM GaN HEMTs and MMICs feature a wide bandgap that increases the breakdown field by 5x and the power density by a factor of 10 to 20 compared to GaAs-based devices. The GaN components are smaller and have a lower capacitance for the same operating power. They can operate over a wider bandwidth while exhibiting good input and output matching. Typical applications include weather, defense and commercial-based systems, air traffic control, and fire control.
Features
- MMICs
- Multi-stage
- Variety of power levels
- High gain
- High efficiency
- IM-FETs
- 50Ω building blocks in support of higher power systems
- Highly accurate modeling support
- Maximum flexibility to optimize amplifier design
Applications
- Pulsed and CW X-band radars
- Marine, ground, and airborne radar platforms
- Weather
- Air traffic control
- Fire control
- Defense and commercial-based systems
Related Products
MACOM HEMT au GaN
Offrent une densité de puissance plus élevée et des bandes passantes plus larges en comparaison avec des transistors au silicium (Si) ou à l'arséniure de gallium (GaAs).
MACOM MMIC basés sur HEMT au GaN
Permet d'obtenir des bandes passantes extrêmement larges au sein d'un boîtier à faible encombrement.