ISSI IS26KL256S HYPERFLASH™ Non-Volatile Memory

ISSI IS26KL256S HYPERFLASH™ Non-Volatile Memory is a high-speed CMOS, MIRRORBIT™ NOR flash device with the HYPERBUS™ low signal count Double Data Rate (DDR) interface. This non-volatile memory is a 3V HYPERFLASH with 256Mb density and 100MHz speed. ISSI IS26KL256S HYPERFLASH Non-Volatile Memory operates from -40°C to +85°C industrial temperature range. This memory provides read and write operations to the burst-oriented HYPERFLASH device. Features include up to 333Mb/s sustained read throughput and sequential burst transactions.

Features

3V I/O and 11 bus signals
Single-ended clock
Read-Write Data Strobe (RWDS)
HYPERFLASH™ memories use RWDS only as a read data strobe
Up to 333MB/s sustained read throughput
DDR are two data transfers per clock
100MHz clock rate (200Mb/s) @ 3V_VCC
Sequential burst transactions
Low power modes
- 12mA no wake-up required active clock stop during read
- 25µA (typical) no wake-up required standby
- Deep power-down
  - 8µA (typical)
  - 300µs wake-up required

32bytes (16 clocks) wrapped burst length configurable burst characteristics
-40°C to +85°C industrial operating temperature range
Advanced sector protection:
- Volatile and non-volatile protection methods for each sector
Sector erase
- Uniform 256kB sectors
- Optional eight 4kB parameter sectors (32kB total)