Ampleon BLP981 LDMOS Power Transistor
Ampleon BLP981 Laterally Diffused Metal-Oxide-Semiconductor (LDMOS) Power Transistor is a 170W device engineered for broadband applications spanning from HF up to 1400MHz. Designed with high ruggedness and efficiency in mind, the Ampleon BLP981 is ideal for both analog and digital transmitter systems in broadcast, avionics, and other non-cellular communication domains. The transistor features integrated dual-sided ESD protection, high power gain, and excellent thermal stability, making the BLP981 suitable for demanding environments. A robust design ensures reliable performance under challenging operating conditions, while also offering easy power control and consistent signal amplification.
Features
- Designed for broadband operation
- High efficiency
- Integrated dual-sided ESD protection
- Excellent ruggedness
- High power gain
- Excellent reliability
- Easy power control
- Excellent stability
Applications
- Broadcast transmitter applications
- Avionics applications up to 1400MHz
- Non-cellular communication applications
Specifications
- 108V maximum drain-source voltage
- -6V to +11V gate-source voltage range
- +225°C maximum junction temperature
- 0.50K/W thermal resistance from junction to case
- AC characteristics
- 0.79pF typical feedback capacitance
- 111pF typical input capacitance
- 32.8pF typical output capacitance
- DC characteristics
- 108V minimum drain-source breakdown voltage
- 1.5V to 2.5V gate-source threshold voltage range
- 1.5V to 2.5V gate-source quiescent voltage range
- 1.4µA maximum drain leakage current
- 20A typical drain cut-off current
- 140nA maximum gate leakage current
- 0.19Ω typical drain-source on-state resistance
Publié le: 2025-05-07
| Mis à jour le: 2025-11-11