CoolSIC SiC MOSFETs

Results: 5
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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Infineon Technologies SiC MOSFETs CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
Datasheet
1.390In Stock
480Expected 1/28/2027
Min.: 1
Mult.: 1

Through Hole TO-247-4 1 Channel 2 kV 89 A 33 mOhms - 10 V, + 23 V 3.5 V 137 nC - 55 C + 150 C 576 W Enhancement CoolSIC
Infineon Technologies SiC MOSFETs CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
Datasheet
808In Stock
1.920On Order
Min.: 1
Mult.: 1

Through Hole TO-247-4 1 Channel 2 kV 48 A 64 mOhms - 10 V, + 23 V 3.5 V 82 nC - 55 C + 150 C 348 W Enhancement CoolSIC
Infineon Technologies SiC MOSFETs CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
Datasheet
787In Stock
480Expected 8/9/2027
Min.: 1
Mult.: 1

Through Hole TO-247-4 1 Channel 2 kV 34 A 98 mOhms - 10 V, + 23 V 3.5 V 64 nC - 55 C + 150 C 267 W Enhancement CoolSIC
Infineon Technologies SiC MOSFETs CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
Datasheet
1.927On Order
Min.: 1
Mult.: 1

Through Hole TO-247-4 1 Channel 2 kV 123 A 16.5 mOhms - 10 V, + 23 V 3.5 V 246 nC - 55 C + 150 C 552 W Enhancement CoolSIC
Infineon Technologies SiC MOSFETs CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
Datasheet
Lead-Time 52 Weeks
Min.: 1
Mult.: 1

Through Hole TO-247-4 1 Channel 2 kV 26 A 131 mOhms - 10 V, + 23 V 3.5 V 55 nC - 55 C + 150 C 217 W Enhancement CoolSIC