2ED218x High-Current 650V Half-Bridge Gate Drivers

Infineon Technologies 2ED218x High-Current 650V Half-Bridge Gate Drivers feature silicon-on-insulator (SOI) technology and an integrated bootstrap diode (BSD) in a DSO-8 or DSO-14 package. The series combines high current with high speed to drive MOSFETs and IGBTs with typical 2.5A sink and source current. The high-voltage, level-shift SOI technology provides robustness to protect against negative transient voltage spikes and lowers level-shift power losses to minimize device-switching power dissipation. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits. Infineon Technologies 2ED218x High-Current 650V Half-Bridge Gate Drivers offer ruggedness and noise immunity against negative transient voltages on the VS pin.