D2 Series N-Channel Depletion Mode Power MOSFETs

IXYS D2 Series 100V to 1700V N-Channel Depletion Mode Power MOSFETs are depletion mode devices that operate in a normally "on" mode, requiring zero turn-on voltage at the gate terminal. IXYS D2 series provides blocking voltages up to 1700V and low drain-to-source resistances to provide simplified control and reduced power dissipation in systems that are continuously “on," like emergency or burglar alarms.

Résultats: 34
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Description Fiche technique Disponibilité Prix (EUR) Filtrer les résultats dans le tableau par prix unitaire basé sur votre quantité.
Qté. RoHS Modèle de ECAO Technologie
Style de montage
Package/Boîte
Polarité du transistor
Nombre de canaux
Vds - Tension de rupture drain-source
Id - Courant continu de fuite
Rds On - Résistance drain-source
Vgs - Tension grille-source
Vgs th - Tension de seuil grille-source
Qg - Charge de grille
Température de fonctionnement min.
Température de fonctionnement max.
Pd - Dissipation d’énergie
Mode canal
Conditionnement
IXYS MOSFET N-CH MOSFETS (D2) 1000V 6A
Fiche technique
3.642En stock
Min. : 1
Mult. : 1

Si SMD/SMT TO-263AA-3 N-Channel 1 Channel 1 kV 6 A 2.2 Ohms 20 V 2.5 V 95 nC - 55 C + 150 C 300 W Depletion Tube
IXYS MOSFET N-CH MOSFETS (D2) 500V 3A
Fiche technique
3.646En stock
Min. : 1
Mult. : 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 500 V 3 A 1.5 Ohms 20 V 4.5 V 40 nC - 55 C + 150 C 125 W Depletion Tube
IXYS MOSFET TO263 1KV 6A N-CH DEPL
Fiche technique
679En stock
Min. : 1
Mult. : 1

Si SMD/SMT TO-263AA-3 N-Channel 1 Channel 1 kV 6 A 2.2 Ohms 20 V 2.5 V 95 nC - 55 C + 150 C 300 W Depletion Tube
IXYS MOSFET N-CH MOSFETS (D2) 1000V 800MA
Fiche technique
1.703En stock
Min. : 1
Mult. : 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1 kV 1.6 A 10 Ohms 20 V 4.5 V 27 nC - 55 C + 150 C 100 W Depletion Tube
IXYS MOSFET D2 Depletion Mode Power MOSFET
Fiche technique
786En stock
Min. : 1
Mult. : 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 1 kV 10 A 1.5 Ohms 20 V 4.5 V 200 nC - 55 C + 150 C 695 W Depletion Tube

IXYS MOSFET N-CH 200V 16A MOSFET
Fiche technique
502En stock
Min. : 1
Mult. : 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 16 A 80 mOhms 20 V 4.5 V 208 nC - 55 C + 150 C 695 W Depletion Tube
IXYS MOSFET N-CH MOSFETS (D2) 1000V 1.6A
Fiche technique
6.918En stock
6.160Sur commande
Min. : 1
Mult. : 1

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 1 kV 1.6 A 10 Ohms 20 V 4.5 V 27 nC - 55 C + 150 C 100 W Depletion Tube
IXYS MOSFET N-CH MOSFETS (D2) 1000V 3A
Fiche technique
698En stock
Min. : 1
Mult. : 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1 kV 3 A 6 Ohms 20 V 4.5 V 37.5 nC - 55 C + 150 C 125 W Depletion Tube

IXYS MOSFET TO247 1KV 10A N-CH DEPL
Fiche technique
275En stock
30026/10/2026 attendu
Min. : 1
Mult. : 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 10 A 1.5 Ohms 20 V 4.5 V 200 nC - 55 C + 150 C 695 W Depletion Tube

IXYS MOSFET N-CH 500V 16A MOSFET
Fiche technique
861En stock
Min. : 1
Mult. : 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 16 A 300 mOhms 20 V 4 V 199 nC - 55 C + 150 C 695 W Depletion Tube

IXYS MOSFET N-channel MOSFET
Fiche technique
302En stock
Min. : 1
Mult. : 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1.7 kV 2 A 6.5 Ohms 20 V 4.5 V 110 nC - 55 C + 150 C 568 W Enhancement Tube

IXYS MOSFET N-CH MOSFETS (D2) 500V 6A
Fiche technique
469En stock
Min. : 1
Mult. : 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 6 A 550 mOhms 20 V 4.5 V 96 nC - 55 C + 150 C 300 W Depletion Tube
IXYS MOSFET N-CH MOSFETS 1000V 800MA
Fiche technique
1.667En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 1 kV 800 mA 21 Ohms 20 V 4 V 14.6 nC - 55 C + 150 C 60 W Depletion Tube
IXYS MOSFET N-CH MOSFETS (D2) 1000V 3A
Fiche technique
892En stock
1.00030/09/2026 attendu
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 1 kV 3 A 6 Ohms 20 V 4.5 V 37.5 nC - 55 C + 150 C 125 W Depletion Tube
IXYS MOSFET N-CH MOSFETS (D2) 500V 3A
Fiche technique
1.240En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 3 A 1.5 Ohms 20 V 4.5 V 40 nC - 55 C + 150 C 125 W Depletion Tube
IXYS MOSFET N-CH MOSFETS (D2) 1000V 6A
Fiche technique
525En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 1 kV 6 A 2.2 Ohms 20 V 2.5 V 95 nC - 55 C + 150 C 300 W Depletion Tube
IXYS MOSFET N-CH MOSFETS 500V 800MA
Fiche technique
6.445En stock
Min. : 1
Mult. : 1

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 500 V 800 mA 4.6 Ohms 20 V 4.5 V 12.7 nC - 55 C + 150 C 60 W Depletion Tube
IXYS MOSFET N-CH MOSFETS (D2) 1000V 800MA
Fiche technique
52En stock
3.050Sur commande
Min. : 1
Mult. : 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1 kV 800 mA 21 Ohms 20 V 4 V 14.6 nC - 55 C + 150 C 60 W Enhancement Tube
IXYS MOSFET TO263 1KV .8A N-CH HIVOLT
Fiche technique
3En stock
40015/12/2026 attendu
Min. : 1
Mult. : 1

Si SMD/SMT TO-263HV-3 N-Channel 1 Channel 1 kV 800 mA 21 Ohms 20 V 4 V 14.6 nC - 55 C + 150 C 60 W Depletion Tube
IXYS MOSFET N-CH MOSFETS (D2) 500V 800MA
Fiche technique
556En stock
4028/10/2026 attendu
Min. : 1
Mult. : 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 500 V 800 mA 4.6 Ohms 20 V 4.5 V 12.7 nC - 55 C + 150 C 60 W Depletion Tube

IXYS MOSFET 6Amps 1000V
Fiche technique
163En stock
Min. : 1
Mult. : 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 6 A 2.2 Ohms 20 V 2.5 V 95 nC - 55 C + 150 C 300 W Depletion Tube
IXYS MOSFET N-CH MOSFETS 500V 800MA
Fiche technique
465En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 800 mA 4.6 Ohms 20 V 2.5 V 12.7 nC - 55 C + 150 C 60 W Depletion Tube
IXYS MOSFET N-CH MOSFETS (D2) 1000V 1.6A
Fiche technique
593En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 1 kV 1.6 A 10 Ohms 20 V 4.5 V 27 nC - 55 C + 150 C 100 W Depletion Tube
IXYS MOSFET N-CH MOSFETS (D2) 500V 1.6A
Fiche technique
237En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 1.6 A 2.3 Ohms 20 V 4.5 V 23.7 nC - 55 C + 150 C 100 W Depletion Tube
IXYS MOSFET N-CH MOSFETS (D2) 500V 6A
Fiche technique
100En stock
20018/11/2026 attendu
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 6 A 550 mOhms 20 V 4.5 V 96 nC - 55 C + 150 C 300 W Depletion Tube