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SiC MOSFET SIC_DISCRETE
- AIMW120R045M1XKSA1
- Infineon Technologies
-
1:
19,59 €
-
736En stock
-
NRND
|
Référence Mouser
726-AIMW120R045M1XKS
NRND
|
Infineon Technologies
|
SiC MOSFET SIC_DISCRETE
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736En stock
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19,59 €
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15,82 €
|
|
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14,29 €
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13,42 €
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Devis
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Devis
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Min. : 1
Mult. : 1
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Through Hole
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TO-247-3
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N-Channel
|
1 Channel
|
1.2 kV
|
52 A
|
59 mOhms
|
- 7 V, + 20 V
|
5.7 V
|
57 nC
|
- 55 C
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+ 175 C
|
228 W
|
Enhancement
|
CoolSiC
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SiC MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
- IMBF170R1K0M1XTMA1
- Infineon Technologies
-
1:
5,05 €
-
10.930Sur commande
|
Référence Mouser
726-IMBF170R1K0M1XTM
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
|
|
10.930Sur commande
Sur commande:
6.930 28/07/2026 attendu
4.000 07/01/2027 attendu
Délai usine :
53 Semaines
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5,05 €
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3,18 €
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2,38 €
|
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2,03 €
|
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1,89 €
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1,81 €
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|
Min. : 1
Mult. : 1
:
1.000
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SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.7 kV
|
5.2 A
|
1 Ohms
|
- 10 V, + 20 V
|
4.5 V
|
5 nC
|
- 55 C
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+ 175 C
|
68 W
|
Enhancement
|
CoolSiC
|
|
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SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R140M1HXKSA1
- Infineon Technologies
-
1:
7,01 €
-
305En stock
-
NRND
|
Référence Mouser
726-IMW120R140M1HXKS
NRND
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
305En stock
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7,01 €
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4,58 €
|
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3,76 €
|
|
|
3,29 €
|
|
|
3,11 €
|
|
Min. : 1
Mult. : 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
19 A
|
182 mOhms
|
- 7 V, + 23 V
|
3.5 V
|
13 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
CoolSiC
|
|
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SiC MOSFET SILICON CARBIDE MOSFET
- IMW65R027M1HXKSA1
- Infineon Technologies
-
1:
13,95 €
-
1.224En stock
-
NRND
|
Référence Mouser
726-IMW65R027M1HXKSA
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
1.224En stock
|
|
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13,95 €
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10,63 €
|
|
|
8,86 €
|
|
|
7,89 €
|
|
|
7,46 €
|
|
Min. : 1
Mult. : 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
47 A
|
34 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
62 nC
|
- 55 C
|
+ 150 C
|
189 W
|
Enhancement
|
CoolSiC
|
|
|
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SiC MOSFET SILICON CARBIDE MOSFET
- IMZA65R048M1HXKSA1
- Infineon Technologies
-
1:
9,57 €
-
40En stock
-
24007/08/2026 attendu
-
NRND
|
Référence Mouser
726-IMZA65R048M1HXKS
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
40En stock
24007/08/2026 attendu
|
|
|
9,57 €
|
|
|
6,77 €
|
|
|
5,64 €
|
|
|
5,01 €
|
|
|
4,76 €
|
|
Min. : 1
Mult. : 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
39 A
|
64 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
33 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
CoolSiC
|
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SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R030M1HXKSA1
- Infineon Technologies
-
1:
15,84 €
-
2.160Sur commande
-
NRND
|
Référence Mouser
726-IMZ120R030M1HXKS
NRND
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
2.160Sur commande
Délai usine :
45 Semaines
|
|
|
15,84 €
|
|
|
10,47 €
|
|
|
9,05 €
|
|
|
8,80 €
|
|
Min. : 1
Mult. : 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
40 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
63 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMZA65R072M1HXKSA1
- Infineon Technologies
-
1:
8,16 €
-
Délai de livraison produit non stocké 52 Semaines
-
NRND
|
Référence Mouser
726-IMZA65R072M1HXKS
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
Délai de livraison produit non stocké 52 Semaines
|
|
|
8,16 €
|
|
|
5,74 €
|
|
|
4,21 €
|
|
|
3,70 €
|
|
Min. : 1
Mult. : 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
28 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
CoolSiC
|
|
Luxembourg