Electronic Vehicle (EV) Solutions

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.

Résultats: 1.385
Sélectionner Image Référence
 Fab.
Description Fiche technique Disponibilité Prix (EUR) Filtrer les résultats dans le tableau par prix unitaire basé sur votre quantité.
Qté. RoHS
ROHM Semiconductor MOSFET -100V 4.5A, Dual Pch+Pch, SOP8, Power MOSFET
Fiche technique
1.484En stock
Min. : 1
Mult. : 1
Bobine: 2.500

ROHM Semiconductor MOSFET SOP8 100V 4.5A N-CH MOSFET
Fiche technique
3.071En stock
MouseReel disponible
Min. : 1
Mult. : 1
Bobine: 2.500

ROHM Semiconductor MOSFET 100V 8A Dual Nch+Nch, SOP8, Power MOSFET
Fiche technique
4.733En stock
Min. : 1
Mult. : 1
Bobine: 2.500

ROHM Semiconductor MOSFET 100V 4.5A Dual Nch+Pch, SOP8, Power MOSFET
Fiche technique
1.718En stock
Min. : 1
Mult. : 1
Bobine: 2.500

ROHM Semiconductor MOSFET 100V 2.0A Dual Nch+Nch, DFN2020-8D, Power MOSFET
Fiche technique
14.702En stock
Min. : 1
Mult. : 1
Bobine: 3.000

ROHM Semiconductor MOSFET DFN 100V 2A DUAL CH
Fiche technique
17.338En stock
MouseReel disponible
Min. : 1
Mult. : 1
Bobine: 3.000

ROHM Semiconductor Diodes et redresseurs Schottky Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD for Automotive: The YQ10RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable opera
Fiche technique
7.578En stock
Min. : 1
Mult. : 1
Bobine: 4.000

ROHM Semiconductor Diodes et redresseurs Schottky Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD: The YQ10RSM10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temp
Fiche technique
7.594En stock
Min. : 1
Mult. : 1
Bobine: 4.000

ROHM Semiconductor Diodes et redresseurs Schottky RECT 100V 12A SM SKY BARRI
Fiche technique
3.980En stock
Min. : 1
Mult. : 1
Bobine: 4.000

ROHM Semiconductor Diodes et redresseurs Schottky RECT 100V 12A SM SKY BARRI
Fiche technique
3.668En stock
Min. : 1
Mult. : 1
Bobine: 4.000

ROHM Semiconductor Diodes et redresseurs Schottky RECT 100V 15A SM SKY BARRI
Fiche technique
5.672En stock
Min. : 1
Mult. : 1
Bobine: 4.000

ROHM Semiconductor Diodes et redresseurs Schottky RECT 100V 15A SM SKY BARRI
Fiche technique
4.095En stock
Min. : 1
Mult. : 1
Bobine: 4.000

ROHM Semiconductor Diodes et redresseurs Schottky Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD: The YQ20BGE10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
Fiche technique
4.820En stock
Min. : 1
Mult. : 1
Bobine: 2.500

ROHM Semiconductor Diodes et redresseurs Schottky Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10CDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
Fiche technique
1.900En stock
MouseReel disponible
Min. : 1
Mult. : 1
Bobine: 1.000

ROHM Semiconductor Diodes et redresseurs Schottky Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD: The YQ20NL10CD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
Fiche technique
1.970En stock
Min. : 1
Mult. : 1
Bobine: 1.000

ROHM Semiconductor Diodes et redresseurs Schottky Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
Fiche technique
2.000En stock
Min. : 1
Mult. : 1
Bobine: 1.000

ROHM Semiconductor Diodes et redresseurs Schottky Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD: The YQ20NL10SE is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
Fiche technique
1.988En stock
Min. : 1
Mult. : 1
Bobine: 1.000

ROHM Semiconductor Diodes et redresseurs Schottky Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD: The YQ30NL10SE is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
Fiche technique
1.908En stock
Min. : 1
Mult. : 1
Bobine: 1.000

ROHM Semiconductor Diodes et redresseurs Schottky RECT 100V 3A SM SKY BARRI
Fiche technique
3.852En stock
Min. : 1
Mult. : 1
Bobine: 4.000

ROHM Semiconductor Diodes et redresseurs Schottky RECT 100V 5A SM SKY BARRI
Fiche technique
3.900En stock
Min. : 1
Mult. : 1
Bobine: 4.000

ROHM Semiconductor Diodes et redresseurs Schottky RECT 100V 5A SM SKY BARRI
Fiche technique
3.955En stock
Min. : 1
Mult. : 1
Bobine: 4.000

ROHM Semiconductor Diodes et redresseurs Schottky RECT 100V 8A SM SKY BARRI
Fiche technique
3.867En stock
Min. : 1
Mult. : 1
Bobine: 4.000

ROHM Semiconductor Diodes et redresseurs Schottky RECT 100V 8A SM SKY BARRI
Fiche technique
3.905En stock
Min. : 1
Mult. : 1
Bobine: 4.000

ROHM Semiconductor MOSFET Transistor, MOSFET Pch, -60V(Vdss), -70A(Id), (4.5V, 6.0V Drive)
Fiche technique
37.371En stock
MouseReel disponible
Min. : 1
Mult. : 1
Bobine: 2.500

ROHM Semiconductor Diodes et redresseurs Schottky RECT 20V 2A SM SKY BARRI
Fiche technique
2.692En stock
MouseReel disponible
Min. : 1
Mult. : 1
Bobine: 18.000