GaAs FET & pHEMT Devices

MicroWave Technology GaAs FET and pHEMT Devices are ultra-linear, high-dynamic range, and low-phase noise devices that include commercial, industrial, military, and space-grade variants. The GaAs process employed by MicroWave Technology is approved for space applications with proven reliability. These devices come with standard and custom device specifications with high-rel and space-rel screening options availability. The GaAs FET and pHEMT devices are RoHS (lead-free) compliant and offer 100% wafer bond pull, die shear, wafer DC burn-in, and bake tests in evaluation per MIL-PRF-38534. These devices are typically suitable for oscillators, narrow-band, wideband applications, space, and military applications.

Résultats: 10
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Description Fiche technique Disponibilité Prix (EUR) Filtrer les résultats dans le tableau par prix unitaire basé sur votre quantité.
Qté. RoHS Modèle de ECAO Technologie
Id - Courant continu de fuite
Vds - Tension de rupture drain-source
Rds On - Résistance drain-source
Fréquence de fonctionnement
Gain
Alimentation en sortie
Température de fonctionnement max.
Package/Boîte
Conditionnement

CML Micro Transistors MOSFET RF 26 GHz Medium Power Packaged GaAs FET
Fiche technique
6En stock
10017/03/2026 attendu
MouseReel disponible
Min. : 1
Mult. : 1
Bobine: 100

GaAs 26 mA 173 Ohms 26 GHz 11 dB 20 dBm + 150 C Reel, Cut Tape, MouseReel
CML Micro Transistors MOSFET RF Narrow and Broad Band High Efficiency Amplifier, High Power Amplifier, and Oscillator Applications
Fiche technique
90En stock
Min. : 10
Mult. : 10

GaAs 440 mA to 800 mA 8 V 12 GHz 9 dB 32 dBm + 150 C Die Bulk
CML Micro Transistors MOSFET RF Narrow and Broad Band Linear Amplifier and Oscillator Applications
Fiche technique
70En stock
Min. : 10
Mult. : 10

GaAs 220 mA 12 GHz 10 dB 26 dBm + 150 C Die Bulk
CML Micro Transistors MOSFET RF Low Noise pHEMT Devices
Fiche technique
50En stock
Min. : 10
Mult. : 10
Bobine: 10
GaAs 120 mA 4 V 26 GHz 10 dB, 13 dB 16 dBm + 150 C Die Reel
CML Micro Transistors MOSFET RF Low Noise pHEMT Devices
Fiche technique
100En stock
Min. : 10
Mult. : 10

GaAs 175 mA 4.5 V 26 GHz 8 dB, 11 dB 20 dBm + 150 C Die Bulk
CML Micro Transistors MOSFET RF Narrow and Broad Band High Efficiency Amplifier and Oscillator Applications
Fiche technique
100En stock
Min. : 10
Mult. : 10

GaAs 150 mA to 190 mA 7.5 V 28 GHz 12 dB 28 dBm + 150 C Die Bulk
CML Micro Transistors MOSFET RF Narrow and Broad Band High Efficiency Amplifier and Oscillator Applications
Fiche technique
10En stock
Min. : 10
Mult. : 10

GaAs 60 mA to 80 mA 6.5 V 28 GHz 15 dB 23 dBm + 150 C Die Bulk
CML Micro Transistors MOSFET RF Narrow and Broad Band High Efficiency Amplifier, High Power Amplifier, and Oscillator Applications
Fiche technique
100En stock
Min. : 10
Mult. : 10

GaAs 250 mA to 300 mA 8 V 18 GHz 11 dB 30 dBm + 150 C Die Bulk
CML Micro Transistors MOSFET RF Narrow and Broad Band High Efficiency Amplifier and Oscillator Applications
Fiche technique
100En stock
Min. : 10
Mult. : 10

GaAs 180 mA to 220 mA 7.5 V 26 GHz 13 dB 28 dBm + 150 C Die Bulk
CML Micro Transistors MOSFET RF Narrow and Broad Band Linear Amplifier and Oscillator Applications
Fiche technique
Délai de livraison produit non stocké 9 Semaines
Min. : 10
Mult. : 10

GaAs 85 mA 26 GHz 15 dB 21 dBm + 150 C Die Bulk