SuperFET® III MOSFETs

onsemi SuperFET® III MOSFETs are high voltage Super-Junction (SJ) N-Channel MOSFETs designed to meet the high power density, system efficiency, and exceptional reliability requirements of telecom, server, electric vehicle (EV) charger and solar products. These devices combine best-in-class reliability, low EMI, excellent efficiency, and superior thermal performance to make them an ideal choice for high-performance applications. Complementing their performance characteristics, the broad range of package options offered by onsemi SuperFET III MOSFETs gives product designers high flexibility, particularly with size-constrained designs.

Résultats: 127
Sélectionner Image Référence Fab. Description Fiche technique Disponibilité Prix (EUR) Filtrer les résultats dans le tableau par prix unitaire basé sur votre quantité. Qté. RoHS Modèle de ECAO Technologie Style de montage Package/Boîte Polarité du transistor Nombre de canaux Vds - Tension de rupture drain-source Id - Courant continu de fuite Rds On - Résistance drain-source Vgs - Tension grille-source Vgs th - Tension de seuil grille-source Qg - Charge de grille Température de fonctionnement min. Température de fonctionnement max. Pd - Dissipation d’énergie Mode canal Qualification Nom commercial Conditionnement

onsemi MOSFET SUPERFET3 650V TO247 PKG 309En stock
Min. : 1
Mult. : 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 75 A 27.4 mOhms - 30 V, 30 V 3 V 227 nC - 55 C + 150 C 595 W Enhancement AEC-Q101 SuperFET III Tube

onsemi MOSFET SuperFET3 650V 23 mOhm 35En stock
90027/03/2026 attendu
Min. : 1
Mult. : 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 75 A 23 mOhms - 30 V, 30 V 2.5 V 222 nC - 55 C + 150 C 595 W Enhancement SuperFET III Tube

onsemi MOSFET SuperFET3 650V 99 mOhm, TO247 PKG 328En stock
Min. : 1
Mult. : 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 30 A 99 mOhms - 30 V, 30 V 2.5 V 61 nC - 55 C + 150 C 227 W Enhancement Tube

onsemi MOSFET SuperFET3 650V 99 mOhm,TO220 PKG 1.233En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 30 A 79 mOhms - 30 V, 30 V 2.5 V 61 nC - 55 C + 150 C 227 W Enhancement Tube

onsemi MOSFET SUPERFET3 650V 24A 125 mOhm 344En stock
Min. : 1
Mult. : 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 24 A 125 mOhms - 30 V, 30 V 2.5 V 46 nC - 55 C + 150 C 181 W Enhancement Tube

onsemi MOSFET SUPERFET3 650V TO220 PKG 630En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 17 A 190 mOhms - 30 V, 30 V 2.5 V 33 nC - 55 C + 150 C 144 W Enhancement Tube

onsemi MOSFET SUPERFET3 650V TO220 PKG 721En stock
Min. : 1
Mult. : 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 12 A 260 mOhms - 30 V, 30 V 2.5 V 24 nC - 55 C + 150 C 90 W Enhancement Tube
onsemi MOSFET SUPERFET3 FAST 95MOHM TO-247-4 450En stock
Min. : 1
Mult. : 1

Si Through Hole N-Channel 1 Channel 650 V 30 A 95 mOhms - 30 V, 30 V 4 V 58 nC - 55 C + 150 C 208 W Enhancement Tube

onsemi MOSFET FRFET 650 V 65 A 40 mOhm TO-247 9En stock
Min. : 1
Mult. : 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 65 A 32 mOhms - 30 V, 30 V 5 V 159 nC - 55 C + 150 C 446 W Enhancement SuperFET III Tube

onsemi MOSFET SUPERFET3 FAST 67MOHM T 68En stock
Min. : 1
Mult. : 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 40 A 67 mOhms - 30 V, 30 V 4 V 80 nC - 55 C + 150 C 266 W Enhancement Tube
onsemi MOSFET SF3 FAST 95MOHM PQFN88 2.850En stock
Min. : 1
Mult. : 1
Bobine: 3.000

Si SMD/SMT TDFN-4 N-Channel 1 Channel 650 V 30 A 95 mOhms - 30 V, 30 V 4 V 58 nC - 55 C + 150 C 208 W Enhancement Reel, Cut Tape, MouseReel

onsemi MOSFET SUPERFET3 650V FRFET 190M 434En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 20 A 190 mOhms - 30 V, 30 V 3 V 34 nC - 55 C + 150 C 162 W Enhancement SuperFET III Tube
onsemi MOSFET SUPERFET3 650V FRFET110MOHM TF220 25En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 30 A 110 mOhms - 30 V, 30 V 3 V 62 nC - 55 C + 150 C 240 W Enhancement SuperFET III Tube
onsemi MOSFET SUPERFET3 FAST 190MOHM TO-220F 424En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 16 A 190 mOhms - 30 V, 30 V 4 V 31 nC - 55 C + 150 C 32 W Enhancement Tube
onsemi MOSFET SF3 650V EASY 125MOHM D2PAK AUTO 20En stock
Min. : 1
Mult. : 1
Bobine: 800

Si D2PAK-3 (TO-263-3) Reel, Cut Tape
onsemi MOSFET SF3 650V EASY 260MOHM D2 473En stock
Min. : 1
Mult. : 1
Bobine: 800

Si D2PAK-3 (TO-263-3) Reel, Cut Tape


onsemi MOSFET SF3 FRFET AUTO 40MOHM T 12En stock
Min. : 1
Mult. : 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 65 A 40 mOhms - 30 V, 30 V 5 V 160 nC - 55 C + 150 C 446 W Enhancement Tube

onsemi MOSFET SF3 650V EASY 40MOHM TO- 134En stock
Min. : 1
Mult. : 1

Si TO-247-3 Tube
onsemi MOSFET SUPERFET3 650V TO220F PKG 754En stock
Min. : 1
Mult. : 1

Si Through Hole N-Channel 1 Channel 650 V 6 A 600 mOhms - 30 V, 30 V 4.5 V 11 nC - 55 C + 150 C 24 W Enhancement Tube
onsemi MOSFET SUPERFET3 650V TO220F PKG 10En stock
Min. : 1
Mult. : 1

Si Through Hole N-Channel 1 Channel 650 V 12 A 250 mOhms - 30 V, 30 V 4.5 V 24 nC - 55 C + 150 C 31 W Enhancement Tube

onsemi MOSFET FRFET 650V 75A 27.4 mOhm 32En stock
Min. : 1
Mult. : 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 75 A 27.4 mOhms - 30 V, 30 V 5 V 259 nC - 55 C + 150 C 595 W Enhancement Tube

onsemi MOSFET FRFET 650 V 65 A 40 mOhm TO-247 26En stock
Min. : 1
Mult. : 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 65 A 40 mOhms - 30 V, 30 V 3 V 158 nC - 55 C + 150 C 446 W Enhancement SuperFET III Tube
onsemi MOSFET 650V 64MOHM MOSFET
6.00016/10/2026 attendu
Min. : 1
Mult. : 1
Bobine: 3.000

Si SMD/SMT TDFN-4 N-Channel 1 Channel 650 V 40 A 64 mOhms - 30 V, 30 V 4 V 82 nC - 55 C + 150 C 260 W Enhancement SuperFET III Reel, Cut Tape, MouseReel
onsemi MOSFET SF3 FRFET 650V 90MOHM PQFN88
2.99820/07/2026 attendu
Min. : 1
Mult. : 1
Bobine: 3.000

Si SMD/SMT TDFN-4 N-Channel 1 Channel 650 V 36 A 90 mOhms - 30 V, 30 V 5 V 66 nC - 55 C + 150 C 272 W Enhancement Reel, Cut Tape, MouseReel
onsemi MOSFET PQFN88 PKG, 99mohm 650V, SuperFET3 21.000Stock usine disponible
Min. : 3.000
Mult. : 3.000
Bobine: 3.000
Si SMD/SMT Power-88-4 N-Channel 1 Channel 650 V 30 A 87 mOhms - 30 V, 30 V 2.5 V 56 nC - 55 C + 150 C 227 W Enhancement SuperFET III Reel