TGF2929 GaN RF Power Transistors

Qorvo TGF2929 GaN RF Power Transistors are discrete GaN (Gallium Nitride) on SiC (Silicon Carbide) HEMTs (High-Electron Mobility Transistor) that operate from DC to 3.5GHz. They are constructed with the QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.