π-MOS VIII MOSFETs

Toshiba π-MOS VIII MOSFETs are 10V gate drive single N-channel devices based on the Toshiba eighth-generation planar semiconductor process, which combines high levels of cell integration with optimized cell design. The technology supports reduced gate charge and capacitance compared to prior generations without losing the benefits of low RDS(ON). Available with 800V and 900V ratings, these MOSFETs target applications such as flyback converters in LED lighting, supplementary power supplies, and other circuits that require current switching below 5.0A. These devices are offered in a standard TO-220 through-hole form factor and a surface-mounted DPAK package.

Résultats: 11
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Description Fiche technique Disponibilité Prix (EUR) Filtrer les résultats dans le tableau par prix unitaire basé sur votre quantité.
Qté. RoHS Modèle de ECAO Technologie
Style de montage
Package/Boîte
Polarité du transistor
Nombre de canaux
Vds - Tension de rupture drain-source
Id - Courant continu de fuite
Rds On - Résistance drain-source
Vgs - Tension grille-source
Vgs th - Tension de seuil grille-source
Qg - Charge de grille
Température de fonctionnement min.
Température de fonctionnement max.
Pd - Dissipation d’énergie
Mode canal
Nom commercial
Conditionnement
Toshiba MOSFET Pb-F POWER MOSFET TRANSISTOR DPAK(OS) MOQ=2000 PD=80W F=1MHZ
Fiche technique
3.176En stock
MouseReel disponible
Min. : 1
Mult. : 1
: 2.000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 3 A 4.9 Ohms - 30 V, 30 V 2.5 V 12 nC - 55 C + 150 C 80 W Enhancement MOSVIII Reel, Cut Tape, MouseReel
Toshiba MOSFET PLN MOS 900V 1300m (VGS=10V) TO-3PN
Fiche technique
2.984En stock
Min. : 1
Mult. : 1

Si Through Hole TO-3P N-Channel 1 Channel 900 V 9 A 1.3 Ohms - 30 V, 30 V 2.5 V 46 nC - 55 C + 150 C 250 W Enhancement MOSVIII Tray
Toshiba MOSFET PLN MOS 800V 1000m (VGS=10V) TO-220SIS
Fiche technique
163En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 800 V 10 A 700 mOhms - 30 V, 30 V 4 V 46 nC - 55 C + 150 C 50 W Enhancement MOSVIII Tube
Toshiba MOSFET PLN MOS 900V 2000m (VGS=10V) TO-3PN
Fiche technique
60En stock
Min. : 1
Mult. : 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 900 V 7 A 1.6 Ohms - 30 V, 30 V 4 V 32 nC - 55 C + 150 C 200 W Enhancement MOSVIII Tray
Toshiba MOSFET PLN MOS 800V 1000m (VGS=10V) TO-3PN
Fiche technique
60En stock
Min. : 1
Mult. : 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 800 V 10 A 700 mOhms - 30 V, 30 V 4 V 46 nC - 55 C + 150 C 250 W Enhancement MOSVIII Tray
Toshiba MOSFET TO252 900V 2A N-CH MOSFET
Fiche technique
13En stock
4.00021/09/2026 attendu
MouseReel disponible
Min. : 1
Mult. : 1
: 2.000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 900 V 2 A 5.9 Ohms - 30 V, 30 V 2.5 V 12 nC - 55 C + 150 C 80 W Enhancement MOSVIII Reel, Cut Tape, MouseReel
Toshiba MOSFET Pb-FPOWERMOSFETTRANSISTORTO-220SISPD=35WF=1MHZ
Fiche technique
290En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 4 A 3.5 Ohms - 30 V, 30 V 2.5 V 15 nC - 55 C + 150 C 35 W Enhancement MOSVIII Tube
Toshiba MOSFET PLN MOS 800V 1700m (VGS=10V) TO-220SIS
Fiche technique
159En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6 A 1.35 Ohms - 30 V, 30 V 4 V 32 nC - 55 C + 150 C 45 W Enhancement MOSVIII Tube
Toshiba MOSFET PLN MOS 900V 2000m (VGS=10V) TO-220SIS
Fiche technique
182En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 900 V 7 A 1.6 Ohms - 30 V, 30 V 4 V 32 nC - 55 C + 150 C 45 W Enhancement MOSVIII Tube
Toshiba MOSFET PLN MOS 900V 1300m (VGS=10V) TO-220SIS
Fiche technique
196En stock
15017/08/2026 attendu
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 900 V 9 A 1 Ohms - 30 V, 30 V 4 V 46 nC - 55 C + 150 C 50 W Enhancement MOSVIII Tube
Toshiba MOSFET Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=35W F=1MHZ
Fiche technique
25011/05/2026 attendu
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 900 V 2.5 A 4.6 Ohms - 30 V, 30 V 2.5 V 15 nC - 55 C + 150 C 35 W Enhancement MOSVIII Tube