Power MOSFETs

Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.

Résultats: 41
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Description Fiche technique Disponibilité Prix (EUR) Filtrer les résultats dans le tableau par prix unitaire basé sur votre quantité.
Qté. RoHS Modèle de ECAO Technologie
Style de montage
Package/Boîte
Polarité du transistor
Nombre de canaux
Vds - Tension de rupture drain-source
Id - Courant continu de fuite
Rds On - Résistance drain-source
Vgs - Tension grille-source
Vgs th - Tension de seuil grille-source
Température de fonctionnement min.
Température de fonctionnement max.
Pd - Dissipation d’énergie
Mode canal
Conditionnement
Diodes Incorporated MOSFET Avalanche
Fiche technique
7.053En stock
Min. : 1
Mult. : 1

Si Through Hole TO-92-3 N-Channel 1 Channel 60 V 600 mA 1 Ohms - 20 V, 20 V 1.3 V - 55 C + 150 C 700 mW Enhancement Bulk
Diodes Incorporated MOSFET N-Chnl 60V
Fiche technique
7.697En stock
Min. : 1
Mult. : 1

Si Through Hole TO-92-3 N-Channel 1 Channel 60 V 270 mA 5 Ohms - 20 V, 20 V 800 mV - 55 C + 150 C 625 mW Enhancement Bulk
Diodes Incorporated MOSFET N-Chnl 240V
Fiche technique
5.033En stock
Min. : 1
Mult. : 1
Bobine: 2.000

Si Through Hole TO-92-3 N-Channel 1 Channel 240 V 260 mA 6 Ohms - 40 V, 40 V 800 mV - 55 C + 150 C 750 mW Enhancement Reel, Cut Tape
Diodes Incorporated MOSFET N-Chnl 200V
Fiche technique
2.540En stock
Min. : 1
Mult. : 1
Bobine: 2.000

Si Through Hole TO-92-3 N-Channel 1 Channel 200 V 120 mA 15 Ohms - 20 V, 20 V 1 V - 55 C + 150 C 500 mW Enhancement Reel, Cut Tape
Diodes Incorporated MOSFET N-Chnl 100V
Fiche technique
4.433En stock
Min. : 1
Mult. : 1
Bobine: 2.000

Si Through Hole TO-92-3 N-Channel 1 Channel 100 V 320 mA 4 Ohms - 20 V, 20 V 800 mV - 55 C + 150 C 700 mW Enhancement Reel, Cut Tape
Diodes Incorporated MOSFET N-Chnl 100V
Fiche technique
3.823En stock
Min. : 1
Mult. : 1
Bobine: 2.000

Si Through Hole TO-92-3 N-Channel 1 Channel 100 V 200 mA 10 Ohms - 20 V, 20 V 800 mV - 55 C + 150 C 625 mW Enhancement Reel, Cut Tape
Diodes Incorporated MOSFET Avalanche
Fiche technique
2.821En stock
Min. : 1
Mult. : 1
Bobine: 2.000

Si Through Hole TO-92-3 N-Channel 1 Channel 60 V 600 mA 1.5 Ohms - 20 V, 20 V 3 V - 55 C + 150 C 700 mW Enhancement Reel, Cut Tape
Diodes Incorporated MOSFET N-Chnl 240V
Fiche technique
3.750En stock
Min. : 1
Mult. : 1

Si Through Hole TO-92-3 N-Channel 1 Channel 240 V 160 mA 16 Ohms - 20 V, 20 V 1 V - 55 C + 150 C 700 mW Enhancement Bulk
Diodes Incorporated MOSFET N-Chnl 60V
Fiche technique
3.146En stock
Min. : 1
Mult. : 1
Bobine: 2.000

Si Through Hole TO-92-3 N-Channel 1 Channel 60 V 600 mA 1.5 Ohms - 20 V, 20 V 3 V - 55 C + 150 C 700 mW Enhancement Reel, Cut Tape
Diodes Incorporated MOSFET N-Chnl 200V
Fiche technique
4.954En stock
Min. : 1
Mult. : 1

Si Through Hole TO-92-3 N-Channel 1 Channel 200 V 120 mA 30 Ohms - 20 V, 20 V 1 V - 55 C + 150 C 500 mW Enhancement Bulk
Diodes Incorporated MOSFET P-Chnl 45V
Fiche technique
7.258En stock
Min. : 1
Mult. : 1

Si Through Hole TO-92-3 P-Channel 1 Channel 45 V 230 mA 14 Ohms - 20 V, 20 V 3.5 V - 55 C + 150 C 700 mW Enhancement Bulk
Diodes Incorporated MOSFET N Chnl. 60V
Fiche technique
6.539En stock
Min. : 1
Mult. : 1

Si Through Hole TO-92-3 N-Channel 1 Channel 60 V 270 mA 5 Ohms - 20 V, 20 V 800 mV - 55 C + 150 C 625 mW Enhancement Bulk
Diodes Incorporated MOSFET N-Chnl 450V
Fiche technique
3.241En stock
MouseReel disponible
Min. : 1
Mult. : 1
Bobine: 4.000

Si Through Hole TO-92-3 N-Channel 1 Channel 450 V 90 mA 50 Ohms - 20 V, 20 V 1 V - 55 C + 150 C 700 mW Enhancement Reel, Cut Tape, MouseReel
Diodes Incorporated MOSFET N-Chnl 60V
Fiche technique
5.882En stock
Min. : 1
Mult. : 1

Si Through Hole TO-92-3 N-Channel 1 Channel 60 V 450 mA 2 Ohms - 20 V, 20 V 800 mV - 55 C + 150 C 700 mW Enhancement Bulk
Diodes Incorporated MOSFET N-Chnl 100V
Fiche technique
7.783En stock
Min. : 1
Mult. : 1
Bobine: 4.000

Si Through Hole TO-92-3 N-Channel 1 Channel 100 V 320 mA 4 Ohms - 20 V, 20 V 800 mV - 55 C + 150 C 700 mW Enhancement Reel, Cut Tape
Diodes Incorporated MOSFET N-Chnl 100V
Fiche technique
6.283En stock
Min. : 1
Mult. : 1
Max. : 220
Bobine: 4.000

Si Through Hole TO-92-3 N-Channel 1 Channel 100 V 200 mA 10 Ohms - 20 V, 20 V 800 mV - 55 C + 150 C 625 mW Enhancement Reel, Cut Tape
Diodes Incorporated MOSFET N-Chnl 60V
Fiche technique
5.435En stock
Min. : 1
Mult. : 1

Si Through Hole TO-92-3 N-Channel 1 Channel 60 V 600 mA 1 Ohms - 20 V, 20 V 1.3 V - 55 C + 150 C 700 mW Enhancement Bulk
Diodes Incorporated MOSFET N-Chnl 60V
Fiche technique
3.741En stock
Min. : 1
Mult. : 1

Si Through Hole TO-92-3 N-Channel 1 Channel 60 V 1.1 A 450 mOhms - 20 V, 20 V 1.3 V - 55 C + 150 C 850 mW Enhancement Bulk
Diodes Incorporated MOSFET Avalanche
Fiche technique
4.441En stock
Min. : 1
Mult. : 1

Si Through Hole TO-92-3 N-Channel 1 Channel 60 V 1.1 A 450 mOhms - 20 V, 20 V 1.3 V - 55 C + 150 C 850 mW Enhancement Bulk
Diodes Incorporated MOSFET N-Chnl 100V
Fiche technique
2.373En stock
Min. : 1
Mult. : 1

Si Through Hole TO-92-3 N-Channel 1 Channel 100 V 900 mA 500 mOhms - 20 V, 20 V 1 V - 55 C + 150 C 850 mW Enhancement Bulk
Diodes Incorporated MOSFET N-Chnl 100V
Fiche technique
4.965En stock
MouseReel disponible
Min. : 1
Mult. : 1
Bobine: 2.000

Si Through Hole TO-92-3 N-Channel 1 Channel 100 V 320 mA 3 Ohms - 20 V, 20 V 750 mV - 55 C + 150 C 700 mW Enhancement Reel, Cut Tape, MouseReel
Diodes Incorporated MOSFET P-Chnl 60V
Fiche technique
7.859En stock
Min. : 1
Mult. : 1

Si Through Hole TO-92-3 P-Channel 1 Channel 60 V 280 mA 5 Ohms - 20 V, 20 V 1.5 V - 55 C + 150 C 700 mW Enhancement Bulk
Diodes Incorporated MOSFET P-Chnl 60V
Fiche technique
16.352En stock
Min. : 1
Mult. : 1

Si Through Hole TO-92-3 P-Channel 1 Channel 60 V 160 mA 14 Ohms - 20 V, 20 V 1.5 V - 55 C + 150 C 625 mW Enhancement Bulk
Diodes Incorporated MOSFET P-Chnl 100V
Fiche technique
7.352En stock
Min. : 1
Mult. : 1
Bobine: 4.000

Si Through Hole TO-92-3 P-Channel 1 Channel 100 V 140 mA 20 Ohms - 20 V, 20 V 1.5 V - 55 C + 150 C 625 mW Enhancement Reel, Cut Tape
Diodes Incorporated MOSFET N-Chnl 100V
Fiche technique
7.484En stock
Min. : 1
Mult. : 1
Bobine: 4.000

Si Through Hole TO-92-3 N-Channel 1 Channel 100 V 450 mA 1.5 Ohms - 20 V, 20 V 800 mV - 55 C + 150 C 700 mW Enhancement Reel, Cut Tape