Infineon Ultrafast 600V Trench IGBTs are rugged, reliable Insulated Gate Bipolar Transistors optimized for Uninterruptible Power Supplies (UPS), solar, industrial motor, and welding applications. These Ultrafast 600V Trench IGBTs utilize Trench thin wafer technology to offer lower conduction and switching losses. Infineon Ultrafast 600V Trench IGBTs are co-packaged with a soft recovery low Qrr diode. These devices are ideal for ultra-fast switching (8KHz to 30KHz) applications with 5µs short circuit rating. They feature low Vce(on) and positive Vce(on) temperature coefficient for easy paralleling.
Low Vce (on) Trench IGBT Technology
Low Switching Losses
Maximum Junction Temperature 175 °C
5μS short circuit SOA
100% of The Parts Tested for ILM
Positive Vce (on) Temperature Coefficient
Tight Parameter Distribution
Lead Free Package
High Efficiency in a Wide Range of Applications
Suitable for a Wide Range of Switching Frequencies due to Low Vce (on) and Low Switching Losses
Rugged Transient Performance for Increased Reliability
Excellent Current Sharing in Parallel Operation
Uninterruptible Power Supplies (UPS)
Infineon Technologies IGBT Duopack à faibles pertes
Conçu pour résister à l'humidité grâce aux technologies Trenchstop™ et Fieldstop™.